2011
DOI: 10.1007/s10800-011-0272-5
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Semiconducting behavior of passive film formed on stainless steel in borate buffer solution containing sulfide

Abstract: The semiconducting behavior of passive film formed on 316L stainless steel in borate buffer solution containing sulfide was studied by capacitance measurements (Mott-Schottky approach), electrochemical impedance spectroscopy and potentio dynamic polarization curves. The results reveal that the measured capacitance values of the stainless steel electrode have frequency dependence and hysteresis, which shows amorphous or highly doped semiconductor property of the passive film. The Mott-Schottky plots indicate p-… Show more

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Cited by 23 publications
(8 citation statements)
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“…Increasing Cr content of the SS alters the electronic properties of the passive film in a manner that improves stability of passive film [115,116]. Details of electronics structure of passive film and its dependency on composition can be found in [114][115][116][117][118][119][121][122][123][124][125].…”
Section: Passivation and Pitting Corrosion Of Stainless Steelsmentioning
confidence: 99%
“…Increasing Cr content of the SS alters the electronic properties of the passive film in a manner that improves stability of passive film [115,116]. Details of electronics structure of passive film and its dependency on composition can be found in [114][115][116][117][118][119][121][122][123][124][125].…”
Section: Passivation and Pitting Corrosion Of Stainless Steelsmentioning
confidence: 99%
“…The sign and the value of the linear region slope are representative of the doping type and of the carrier concentration ( N q ), respectively. The numerical value of N q can be calculated using the following Mott–Schottky equation: , where ε r is the dielectric constant of the GLC top layer, ε 0 is the vacuum permittivity, q is the elementary charge (+e for electrons and −e for holes), N q is the carrier concentration ( N d for donors and N a for acceptors), E fb is the flat band potential, k is the Boltzmann constant, and T is the absolute temperature. In this work, the space-charge capacitance ( C sc ) was assumed to be equal to the interfacial capacitance ( C ) at sufficiently high frequencies.…”
Section: Resultsmentioning
confidence: 99%
“…5. To examine differences in film thickness as a function of applied potential, we calculated the film formation charge density q(t) by integrating i film as a function of time: (4) and q(t) followed the relationship with the film thickness h(t), given by Faraday's Law:…”
Section: Film Thickness Calculationmentioning
confidence: 99%
“…The composition and structure of the passive film of stainless steel in high temperature aqueous environment has been instigated 2,3) , indicating that the film contains a Cr oxide-rich inner layer and a Fe oxide-rich outer layer. The Mott-Schottky test on 316L SS in borate buffer solution illustrated that the semiconductor properties of passive film changed with potential 4) . Further, the repassivation kinetics has been studied in aqueous environments by mechanical stripping techniques and the results were described by the equation 5,6) : a -× = t A t i ) ( (1) where i(t) and t represent current density and time respectively.…”
Section: Introductionmentioning
confidence: 99%