Semiconducting Properties of Cd_3−xZn_xAs₂‐Type Solid Solutions

Abstract

The Hall coefficient and resistivity of the solid solutions Cd3−xZnxAs2, formed by the pseudobinary system Cd3As2‐Zn3As2, are measured between 100 and 700 °K. The samples are found to be semiconducting, being n‐type for 0 ≦ x ≦ 1.35, and p‐type for 1.5 ≦ x ≦ 3. The transition from n‐to p‐type takes place at about 47 mole % Zn3As2 with a transition region of 2–3 mole% Zn3As2, an abrupt change in ΔE0 being observed in this transition region. These results show a close correlation with the X‐ray analysis of the system.

Semiconducting Compounds of the AII BV Group

“…The films are always n-type. The resistivity and Hall mobility fo r crystalline films are constant below about 250oK; i1H � T-3 / 2 with increasing temperature (117,120). For specially prepared, very thin films of Cd3As2 (d = 200-2000 A) obtained at ts � 170-180°C, the mobilities reach,!d values up to 0.2 m 2 fV-sec and quantum size effects were observed (131) (Figure 8).…”

“…The same type of "structural diagram" was also obtained fo r Ge films (126). Near the transition a --> c (amorphous to crystalline) rapid changes of resistivity and Hall mobility were observed (Figure 7) (117,129). It is interesting to note that electrical properties of Cd3As2 films do not depend significantly on film thickness and are practically independent of the kind of substrate (amorphous or crystalline) (117,128,129).…”

“…THIN Cd3Asz FILMS The earliest report on the properties of thin films of Cd3Asz was given in (116); more complete investigations are described in (117)(118)(119) and then confirmed by other authors (120,127,128). Since the vapor pressures of Cd, As, and Cd3Asz are rather high and of nearly the same order at the melting point of Cd3Asz (117), direct evaporation has been used to prepare the films a. c in a vacuum of the order 10-5 Torr onto glass, mica, NaCl, KCl (117,120,130), and also BaTi03 and SbSI (128) substrates held at temperatures 20 to 220°e.…”

“…Since the vapor pressures of Cd, As, and Cd3Asz are rather high and of nearly the same order at the melting point of Cd3Asz (117), direct evaporation has been used to prepare the films a. c in a vacuum of the order 10-5 Torr onto glass, mica, NaCl, KCl (117,120,130), and also BaTi03 and SbSI (128) substrates held at temperatures 20 to 220°e. The structure and electrical properties of these films are mainly dependent on the temperature of the substrate, although vacuum conditions also have some influence on them (125) (Figure 6).…”

“…Thin films of Zn3As Z prepared by thermal evaporation in vacuum were obtained by the technique described for Cd3Asz in (117); these films were investigated in (76,77). The transmission in the 0.4 to 20 pm range and the reflectivity in the 0.4 to 1.1 pm range were measured.…”