Semiconductor components and solid state switches for power modulator applications

Welleman, A.; Ramezani, E.; Waldmeyer, J.

doi:10.1109/modsym.2002.1189448

Cited by 4 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A 300 M shot durability is one of the desired requirements for a laser IFE system. Solid state pulsed power systems have been built since the late 1970s [16,17], and they utilize high voltage bipolar junction transistors (BJT), insulated gate bipolar transistors (IGBT), metal oxide semiconductor field-effect transistors (MOSFET), siliconcontrolled rectifiers (SCR) and other thyristors [18][19][20][21][22][23][24][25][26][27][28][29][30]. These pulsed power generators are typically used for low energy, high rep-rated laser systems [31,32] and high voltage/low current applications [33,34].…”

Section: Introductionmentioning

confidence: 99%

A durable gigawatt class solid state pulsed power system

Hegeler¹,

McGeoch²,

Sethian

et al. 2011

IEEE Trans. Dielect. Electr. Insul.

View full text Add to dashboard Cite

A unique all solid-state pulsed power system has been tested at the Naval Research Laboratory that produced 200 kV, 4.5 kA, and 300 ns pulses, continuously for more than 11,500,000 shots into a resistive load at a repetition rate of 10 pps. The Marx has an efficiency of 80% based on calorimetric measurements. This pulser is used to evaluate components and advance solid state designs for a next generation solid-state pulsed power system to drive an electron beam pumped KrF laser system for inertial fusion energy. The solid state pulser, designed and constructed by PLEX LLC, consists of a 12 stage Marx, coupled with a 3rd harmonic stage to sharpen the Marx output waveforms, a main magnetic switch, a compact pulse forming line used as a transit time isolator, and a resistive load. Each Marx stage uses an APP Model S33A compact high voltage switch that consists of 12 series connected thyristors. A life test on individual thyristors showed operation of > 300 M shots at 20 Hz without failure.

show abstract

Section: Introductionmentioning

confidence: 99%

A durable gigawatt class solid state pulsed power system

Hegeler¹,

McGeoch²,

Sethian

et al. 2011

IEEE Trans. Dielect. Electr. Insul.

View full text Add to dashboard Cite

show abstract

“…The reason is, despite the perception or reality of a higher initial capital cost, semiconductor switches offer better lifecycle costs, due to the long life of the switches when the modulator is designed for high reliability [1]. One inherent limitation of semiconductor switches is their voltage ratings, which commercially available hard-switches (MOSFETs, IGBTs, GTOs) fall in the range 0.6-6 kV.…”

Section: Introductionmentioning

confidence: 99%

Inductive Switching with a 1-kA (Saturation) Normally on SiC JFET Switch Module

Mazzola

Gafford

Parker

et al. 2008

2008 IEEE International Power Modulators and High-Voltage Conference

View full text Add to dashboard Cite

Silicon-carbide junction field-effect transistors (JFETs) are maturing in performance, reliability, and manufacturability, especially with voltage ratings ranging from 600-1800 V. The vertical channel JFET (VJFET) with extremely low specific on-resistance (< 0.25 Ω-mm 2 ) is now available. In this paper, new results are reported on a two-switch module packaged in a commercially available plastic half-bridge power module. The switches can handle steady currents up to 500 A, with at least 1 kA available before drain-current saturation occurs. Switching results with a diode-clamped inductive load are reported to investigate voltage sharing between the two series devices when switched simultaneously. The normally on characteristics of these JFET switches are ideal for current sources like charging of inductive loads.

show abstract

Contribution of high voltage direct current transmission systems to inter-area oscillation damping: A review

Vural

2016

Renewable and Sustainable Energy Reviews

View full text Add to dashboard Cite

Semiconductor components and solid state switches for power modulator applications

Cited by 4 publications

References 0 publications

A durable gigawatt class solid state pulsed power system

A durable gigawatt class solid state pulsed power system

Inductive Switching with a 1-kA (Saturation) Normally on SiC JFET Switch Module

Contribution of high voltage direct current transmission systems to inter-area oscillation damping: A review

Contact Info

Product

Resources

About