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The system comprises an all solid-state compact nanosecond pulser and a plasma reactor. The pulser makes use of magnetic compression techniques. Owing to a fast switching at the feed of the HV transformer provided by an ABB GCT switch, one compression stage suffices for the forming of 45-kV, 100-ns pulses across a 120-resistive load at a PRF of up to 1 kHz; the risetime is 15 ns. Plasma reactor is capable of handling both gases and liquids by adding small amounts of atomized water to the gas discharge, in the case of gas, or atomizing polluted liquid itself. In both cases, the treatment is conducted in heterogeneous media. Circuit analysis of compressor and charging system accounting for nonlinear processes in magnetic switches and numerous parasitic parameters is presented. Mechanical and electrical designs are detailed. Typical voltage and current waveforms, volt-ampere characteristics, corona discharge appearance, and light emission characteristics are presented. At operation on a resistive load, the compressor efficiency was found to be approximately 80%, which allowed for air cooling. The experimental results obtained with a resistive load are in fair agreement with the circuit simulation. A novel magnetic compressor circuit improving the coupling to PC discharge is proposed and evaluated.

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A presentation is given about Semiconductor Devices specially designed for high dddt and high current switching.These products include standard and optimized silicon designs with one or several chips in one ceramic housing. In this way, extreme high current and voltage ranges can be achieved. With bipolar technology di/dt values of up to 50 Wps, and current capabilities of up to 150 kA can be reached with one device. All presented devices are easy stackable and because most of them have an integrated driver unit. Also Press-Pack IGBT devices are presented with blocking voltages between 2.5 and 5.2 kV per device. These so-called, StakPakTM IGBT devices offer a short circuit failure mode i and an almost ideal current sharing in the module. All products presented are produced on production lines for standard high power semiconductors and therefore benefit from the same reliability, quality and availability.

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