High current, high di/dt semiconductor devices for single- and repetitive pulse applications

Abstract

A presentation is given about Semiconductor Devices specially designed for high dddt and high current switching.These products include standard and optimized silicon designs with one or several chips in one ceramic housing. In this way, extreme high current and voltage ranges can be achieved. With bipolar technology di/dt values of up to 50 Wps, and current capabilities of up to 150 kA can be reached with one device. All presented devices are easy stackable and because most of them have an integrated driver unit. Also Press-Pack IGBT devices are presented with blocking voltages between 2.5 and 5.2 kV per device. These so-called, StakPakTM IGBT devices offer a short circuit failure mode i and an almost ideal current sharing in the module. All products presented are produced on production lines for standard high power semiconductors and therefore benefit from the same reliability, quality and availability.

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

“…Both, CMC-PP and M-PP, are suitable for series connection of several of these devices, forming a valve [24]. They feature short-circuit failure mode (SCFM) [25], [26], which makes them a viable option for cascaded two-level converters [27], and enables to implement redundancy into the valve.…”

“…IGCTs are press-pack devices enclosed in a circular ceramic housing. The package features double-sided cooling and SCFM [38], which makes them suitable for series connection to form a valve [24]. Current filamentation within the wafer needs to be addressed by slowing down the turn-on process of the device.…”

Turn-on Loss Reduction for High Voltage Power Stack Using Active Gate Driving Method

“…The gate voltage or current is controlled using a predetermined turn-on/off pattern such as a look-up table. The output profile is generated after analysis of the IGBT switching characteristics in each section [11,[14][15][16]. By this method, the switching losses can be reduced because the turn-on/off delay, di/dt and dv/dt at the constant output current region can be reduced.…”

A 100 kJ Pulse Unit for Electromagnetic Forming of Large Area Sheet Metals

“…Semiconductor switches made from stacks of high power, and high voltage thyristors are used in this circuit design, with peak currents in the short circuit case of less than 150 kA per switch [4]. Such elements are commercially available by several companies, including ABB, DYNEX, EUPEC, NKG, and Westcode, in the form of individual components or even as…”