2020
DOI: 10.4236/wjcmp.2020.101002
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Semiconductor Fluorinated Carbon Nanotube as a Low Voltage Current Amplifier Acoustic Device

Abstract: Acoustoelectric effect (AE) in a non-degenerate fluorinated single walled carbon nanotube (FSWCNT) semiconductor was carried out using a tractable analytical approach in the hypersound regime 1 q  , where q is the acoustic wavenumber and  is the electron mean-free path. In the presence of an external electric field, a strong nonlinear dependence of the normalized AE current density AE z o

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Cited by 9 publications
(3 citation statements)
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“…current in the material, known as acoustoelectric effect ( ) [4][5][6]. Theoretical and experimental studies of the generation of in low dimensional structures such as graphene [7][8][9][10], quantum wells ( ) [11] and carbon nanotubes [12][13][14][28][29][30] as well as superlattices ( ) [4,15] have generated lots of interest recently due to the variety of applications that can be derived from these novel nanostructures. Much of the theoretical investigations are mostly pursued using microscopic theory of electron-phonon interactions employing semi-classical Boltzmann's transport equation in the hypersound regime [4,5].…”
Section: Landau Damping Of Plasma Waves (mentioning
confidence: 99%
“…current in the material, known as acoustoelectric effect ( ) [4][5][6]. Theoretical and experimental studies of the generation of in low dimensional structures such as graphene [7][8][9][10], quantum wells ( ) [11] and carbon nanotubes [12][13][14][28][29][30] as well as superlattices ( ) [4,15] have generated lots of interest recently due to the variety of applications that can be derived from these novel nanostructures. Much of the theoretical investigations are mostly pursued using microscopic theory of electron-phonon interactions employing semi-classical Boltzmann's transport equation in the hypersound regime [4,5].…”
Section: Landau Damping Of Plasma Waves (mentioning
confidence: 99%
“…where µ is the electrochemical potential which ensures carrier conservation. For a p−type FSWCNT with a periodicity of 3b, the energy band is given as [8,[21][22][23][24][25]:…”
Section: Carrier Current Densitiesmentioning
confidence: 99%
“…SWCNTs skeletal structure enables the attachment of large number of foreign atoms to the surface without destroying the tubular structure. Doping an armchair-SWCNT with fluorine atoms changes its nature from metallic to semiconducting [8,[21][22][23][24][25].…”
Section: Introductionmentioning
confidence: 99%