Herein, we present a tunable axial power factor (Pzz) in a nondegenerate fluorine-doped single-walled carbon nanotube (FSWCNT) using a tractable analytical approach. We derived the expressions for the electrical conductivity (σ), thermopower (α), and power factor (P) as a function of temperature. Additionally, we investigated the influence of doping concentration (no), constant electric field (Eo), and overlapping integrals (Δs and Δz) on their behavior. The intensity of the axial power factor (Pzz) and the operational temperature range can be tuned using the constant electric field, doping (carrier), and overlapping integrals, respectively. Applying the temperature field to the FSWCNT induces high-frequency carrier dynamics that critically depend on the magnitude of the temperature gradient. There exist two dynamic regimes that depend on the temperature gradient and carrier’s initial position. The carrier drifts through the FSWCNT and is allowed to perform drifting periodic orbits (in THz frequencies), resulting in the resonant enhancement of Pzz. Alternatively, inducing Bloch-like oscillations (in THz frequencies) cause ultra-high negative differential velocity without domain formation using an adequate temperature field. Moreover, we compare the Pzz of the FSWCNT to that of the superlattice (SL) (PzzSL), which shows that the Pzz of the FSWCNT is 8 orders of magnitude greater than that of the SL. It is worth noting that the large Pzz obtained and the ability to tune the FSWCNT to operate at high temperatures make the FSWCNT a potential candidate for thermoelectric applications.

Acoustoelectric effect (AE) in a non-degenerate Fluorine modified single walled carbon nanotube (FSWCNT) semiconductor is studied theoretically using the Boltzmann's transport equation. The study is done in the hypersound regime i.e. 1 q  , where q is the acoustic phonon wavenumber and  is the electron mean free path. The results obtained are compared with that of undoped single walled carbon nanotube (SWCNT). The AE current density for FSWCNT is observed to be four orders of magnitude smaller than that of undoped SWCNT with increasing temperature, that is FSWCNT SWCNT z z j j . This is because the electron-phonon interactions in SWCNT are stronger than FSWCNT. Thus, there are more intra-mini-band electrons interacting with the acoustic phonons to generate a higher AE current in SWCNT than in FSWCNT. This has been observed experimentally, where the electrical resistance of FSWCNT is higher than pristine SWCNT i.e. 20 M R Ω . The study shows the potential for FSWCNT as an ultrasound current source density imaging (UCSDI) and AE hydrophone material. However, FSWCNT offers the potential for room temperature applications of acoustoelectric device but other techniques are needed to reduce the resistance.

Acoustoelectric effect (AE) in a non-degenerate fluorinated single walled carbon nanotube (FSWCNT) semiconductor was carried out using a tractable analytical approach in the hypersound regime 1 q  , where q is the acoustic wavenumber and  is the electron mean-free path. In the presence of an external electric field, a strong nonlinear dependence of the normalized AE current density AE z o

We show that Hall-like current can be induced by acoustic phonons in a nondegenerate, semiconductor fluorine-doped single-walled carbon nanotube (FSWCNT) using a tractable analytical approach in the hypersound regime 1 q  (q is the modulus of the acoustic wavevector and  is the electron mean free path). We observed a strong dependence of the Hall-like current on the magnetic field, H, the acoustic wave frequency, q ω , the temperature, T, the overlapping integral, ∆ , and the acoustic wavenumber, q. Qualitatively, the Hall-like current exists even if the relaxation time τ does not depend on the carrier energy but has a strong spatial dispersion, and gives different results compared to that obtained in bulk semiconductors. For

We perform self-consistent analysis of the Boltzmann transport equation for momentum and energy in the hypersound regime i.e., ql >> 1 (q is the acoustic wavenumber and l is the mean free path). Here, we investigate Landau damping of acoustic phonons (LDOAP) in graphene nanoribbon that leads to acoustoelectric current generation. Under a non-quantized field with drift velocity, we observed an acoustic phonon energy quantization which depends on the energy gap, the width and the sub-index of the material. An effect similar to Cerenkov emission was observed where the electron absorbs the confined acoustic phonons energy, causing the generation of acoustoelectric current in Graphene Nanoribbon. A qualitative analysis of the absorption and versus phonon frequency is in agreement with experimental reports. We observed a shift in the peaks when the energy gap and the drift velocity were varied. Most importantly, a transparency window appears when making graphene nanoribbon a potential candidate as an acoustic wave filter with applications in phonon spectrometers and also as tunable gate-controlled quantum information device.