Semiconductor Image Sensing

Blanc, Nicolas; Giffard, P.; Seitz, Peter; Buchschacher, P.; Nguyen, Valérie; Hoheisel, M.

doi:10.1007/978-0-387-75593-9_8

Cited by 2 publications

(2 citation statements)

References 41 publications

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“…A key attraction of using Si is that the photosensor and underlying circuitry are made of the same material, meaning that the photoactive layer can be monolithically integrated with the electronic readout. Si provides many other advantages in image sensing technologies -as is evident from its current usage in image sensors globally and the manner in which it has been repurposed to fit new applications [5]. However, it also has certain limitations which are particularly problematic for MV applications.…”

Section: Introductionmentioning

confidence: 99%

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Frontiers in Photosensor Materials and Designs for New Image Sensor Applications

2021

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Certain applications of image sensors require capabilities that are beyond the technology of current image sensors such as automated quality inspection systems based on color discrimination under varying levels of illumination. This paper serves to provide a brief overview of image sensor technologies involving the use of alternative photosensor materials (organic semiconductors and perovskites) being developed to meet these needs. The discussion around such developments is typically confined to chemistry and physics "silos"; by publishing in this special edition, the authors hope to bridge the knowledge gap between scientists developing new photosensor materials and engineers developing image sensors for new machine vision systems.

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Section: Introductionmentioning

confidence: 99%

“…These restrict the amount of light reaching the pixels, limiting the ability to miniaturize the image sensors and increase the pixel density [8]. Color filters also hinder image sensor modification to fit within certain architectures [5,9] and reduce the dynamic range and color accuracy of the image sensor [10].…”

Section: Introductionmentioning

confidence: 99%

Frontiers in Photosensor Materials and Designs for New Image Sensor Applications

2021

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Towards digital photon counting cameras for single-molecule optical nanoscopy

et al. 2014

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Background: Optical nanoscopy based on separation of single molecules by stochastic switching and subsequent localization allows surpassing the diffraction limit of light. The growing pursuit towards live-cell imaging using nanoscopy demands advancements in both science and technology. Results: In this article, we provide an overview of the technological advancements in the development of scientific cameras used for nanoscopy. We discuss the prospects of novel digital photon counting cameras based on a single-photon avalanche diode (SPAD) array camera for optical nanoscopy. Numerical simulations are used to evaluate and compare different scientific cameras for their performance towards single-molecule identification and localization. Conclusion: A SPAD array camera with single-photon sensitivity and zero read-out noise allows for the detection of extremely weak signals at ultra-fast imaging speeds. With temporal resolution in the order of micro-seconds, a SPAD array camera offers great potential for live-cell imaging with super-resolution.

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Semiconductor Image Sensing

Cited by 2 publications

References 41 publications

Frontiers in Photosensor Materials and Designs for New Image Sensor Applications

Frontiers in Photosensor Materials and Designs for New Image Sensor Applications

Towards digital photon counting cameras for single-molecule optical nanoscopy

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