Semiconductor laser simulations using non-equilibrium Green’s functions

Miloszewski, Jacek M.; Wartak, Marek S.

doi:10.1063/1.3689324

Cited by 4 publications

(2 citation statements)

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“…It became possible (and necessary) due to (i) adaptation of the complex formalism into 'easy to implement' equations [9], (ii) intense growth of computational resources and development of numerical algorithms, both enabling the efficient use of the method, (iii) development of new devices whose operation relies on quantum phenomena. Consequently, in recent years, the NEGF method has been used for studying electronic transport phenomena in resonant tunnelling diodes [10], field effect [11] and tunnelling [12] transistors, carbon nanotube devices [13], light-emitting diodes [14][15][16], photodetectors [17][18][19], quantum-well solar cells [20][21][22], quantum [23][24][25][26] and inter-band [27] cascade lasers and, eventually, SL-based devices [28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Quantum simulations of band-to-band tunnelling in a type-II broken-gap superlattice diode

2024

Opto-Electronics Review

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In recent years, type-II superlattice-based devices have completed the offer of the electronic industry in many areas of applications. Photodetection is one of them, especially in the midinfrared wavelength range. It is due to the unique feature of a superlattice material, which is a tuneable bandgap. It is also believed that the dark current of superlattice-based photodetectors is strongly suppressed due to the suppression of the band-to-band tunnelling current in a superlattice material. This argument relies, however, on a semi-classical approach that treats superlattice as a bulk material with effective parameters extracted from the kp analysis. In the paper, a superlattice device is analysed on a quantum level: the nonequilibrium Green's function method is applied to the two-band Hamiltonian of the InAs/GaSb superlattice p-i-n diode. The analysis concentrates on the band-to-band tunnelling with the aim to validate the correctness of a semi-classical description of the phenomenon. The results of calculations reveal that in a superlattice diode, the inter-band tunnelling occurs only for certain values of energy and in-plane momentum, for which electronic and hole sub-bands cross. The transitions occurring for vanishing in-plane momentum produce resonances in the current-voltage characteristics -the feature which was reported in a few experimental observations. This scenario is quite different from that occurring in bulk materials, where there is a range of energy-momentum pairs for which the band-to-band tunnelling takes place, and so current-voltage characteristics are free from any resonances. However, simulations show that, while not justified for a detailed analysis, the semi-classical description can be applied to superlattice-based devices for an 'order of magnitude' estimation of the band-to-band tunnelling current.

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Section: Introductionmentioning

confidence: 99%

Quantum simulations of band-to-band tunnelling in a type-II broken-gap superlattice diode

2024

Opto-Electronics Review

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“…Then, the electron-photon selfenergies can be obtained assuming suitable expression for the photon population N . This would require evaluation of photon Green's functions in the laser cavity which is quite demanding (see, e.g., Pereira and Henneberger 1996;Miloszewski and Wartak 2012) and left for future studies. In a simplified approach presented here, the confinement of optical field by laser cavity is accounted for through the average waveguide losses and the confinement factor which modify the threshold condition whereas photon density in laser's cavity is related to the vector potential as |C | 2 N = e 2 ℏ∕(2V 0 )N = e 2 |A z | 2 .…”

Section: Introductionmentioning

confidence: 99%