Semiconductor Logic Technology in IBM

Rymaszewski, Eugene J.; Walsh, J.; Leehan, G. W.

doi:10.1147/rd.255.0603

Cited by 21 publications

(4 citation statements)

References 51 publications

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“…This allows for the full depletion of the free charge carriers by the application of a reverse bias voltage between the metallic solder-pads and the upper surface of the sensor. The detector ASIC input solder-pads are bonded to the sensor-layer solder pads using the Flip-Chip solder-bump technology (Rymaszewski et al , 1981) to create the hybrid composite device. The universal feature of these pixel detector ASICs is that the discrimination and digitization of the data, such as the net total charge collected, is accomplished within each pixel prior to the download transfer to other devices for further storage and processing.…”

Section: Solid-state Detectorsmentioning

confidence: 99%

ICRU Report 98, Stochastic Nature of Radiation Interactions: Microdosimetry

Braby,

Conte,

Dingfelder

et al. 2023

J�ICRU

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The Journal of the ICRU publishes reports on important and topical subjects within the field of radiation science and measurement. It is the successor to the series of reports published by or on behalf of the International Commission on Radiation Units and Measurements (ICRU) since 1927. The Commission continually reviews radiation science with the aim of identifying areas where the development of guidance and recommendations can make an important contribution.

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Section: Solid-state Detectorsmentioning

confidence: 99%

ICRU Report 98, Stochastic Nature of Radiation Interactions: Microdosimetry

Braby,

Conte,

Dingfelder

et al. 2023

J�ICRU

View full text Add to dashboard Cite

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“…The logic products, called Monolithic Systems Technology (MST) [26], had two performance categories, six and ten nanoseconds. To minimize logistics, the master slice [27,28] approach was taken, wherein each product set is made in a common design until the wafers reach the metallization step, at which point each particular circuit has its unique interconnection pattern engraved. We capitalized on our multichip modules to average six circuits per module.…”

Section: Monolithic Integrated Circuitsmentioning

confidence: 99%

Semiconductor Manufacturing in IBM, 1957 to the Present: A Perspective

Harding

1981

IBM J. Res. & Dev.

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Semiconductor Manufacturing in \BW\, 1957 to the Present: A PerspectiveOver the past twenty-five years we have witnessed the transition from germanium-based, individual transistors in their hermetically sealed enclosures to VLSI silicon devices interconnected in modular packages containing more than 50 000 logic circuits or as many as 500 000 bits of random-access memory. During this progression, manufacturing facilities producing these modern products have become more complex and technologically more sophisticated than those of any other industry. This review traces these fast-moving changes as they have occurred in IBM, emphasizing the continuous expansion of manufacturing skills and disciplines and how these, in turn, have contributed to the development of today's products and their respective manufacturing systems. 43

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“…In particular, refractory metal nitrides, deposited by reactive sputtering, were shown to be promising diffusion barriers. These kinds of barriers block the interaction between the interconnect materials and the silicon, and they are potentially useful as a diffusion barrier in other systems, in addition to those between the interconnect materials and the silicon [16,17]. Recently, TFMGs were gradually recognized and accepted as the most effective barriers layer for Cu metallization due to the absence of grain boundaries and immiscibility with copper [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Material Properties of Zr–Cu–Ni–Al Thin Films as Diffusion Barrier Layer

Sung

Chen

2020

Crystals

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Due to the rapid increase in current density encountered in new chips, the phenomena of thermomigration and electromigration in the solder bump become a serious reliability issue. Currently, Ni or TiN, as a barrier layer, is widely academically studied and industrially accepted to inhibit rapid copper diffusion in interconnect structures. Unfortunately, these barrier layers are polycrystalline and provide inadequate protection because grain boundaries may presumably serve as fast diffusion paths for copper and could react to form Cu–Sn intermetallic compounds (IMCs). Amorphous metallic films, however, have the potential to be the most effective barrier layer for Cu metallization due to the absence of grain boundaries and immiscibility with copper. In this article, the diffusion properties, the strength of the interface between polycrystalline and amorphous ZrCuNiAl thin film, and the effects of quenching rate on the internal microstructures of amorphous metal films were individually investigated by molecular dynamics (MD) simulation. Moreover, experimental data of the diffusion process for three different cases, i.e., without barrier layer, with an Ni barrier layer, and with a Zr53Cu30Ni9Al8 thin film metallic glass (TFMG) barrier layer, were individually depicted. The simulation results show that, for ZrCuNiAl alloy, more than 99% of the amorphous phase at a quenching rate between 0.25 K/ps and 25 K/ps can be obtained, indicating that this alloy has superior glass-forming ability. The simulation of diffusion behavior indicated that a higher amorphous ratio resulted in better barrier performance. Moreover, a very small and uniformly distributed strain appears in the ZrCuNiAl layer in the simulation of the interfacial tension test; however, almost all the voids are initiated and propagated in the Cu layer. These phenomena indicate that the strength of the ZrCuNiAl/Cu interface and ZrCuNiAl layer is greater than polycrystalline Cu. Experimental results show that the Zr53Cu30Ni9Al8 TFMG layer exhibits a superior barrier effect. Almost no IMCs appear in this TFMG barrier layer even after aging at 125 °C for 500 h.

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Semiconductor Logic Technology in IBM

Cited by 21 publications

References 51 publications

ICRU Report 98, Stochastic Nature of Radiation Interactions: Microdosimetry

ICRU Report 98, Stochastic Nature of Radiation Interactions: Microdosimetry

Semiconductor Manufacturing in IBM, 1957 to the Present: A Perspective

Material Properties of Zr–Cu–Ni–Al Thin Films as Diffusion Barrier Layer

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