Semiconductor membrane external-cavity surface-emitting laser (MECSEL)

Kahle, Hermann; Mateo, Cherry May N.; Brauch, U.; Tatar-Mathes, Philipp; Bek, Roman; Jetter, Michael; Graf, Thomas; Michler, Peter

doi:10.1364/optica.3.001506

Cited by 75 publications

(31 citation statements)

References 33 publications

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“…However, the distributed Bragg reflector (DBR) in SDLs adds significantly to the growth time and complexity and limits the thermal performance. In contrast, recently introduced DBR-free SDL technology [7][8][9] offers a potential solution to these limitations. DBR-free SDLs on diamond, emitting 6 W continuous wave (CW) output power at 1055 nm have been demonstrated in [8].…”

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confidence: 99%

DBR‐free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

et al. 2017

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We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In 0.13 Ga 0.87 As quantum wells embedded in strain-compensating GaAs 0.94 P 0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.Introduction: Semiconductor disc laser (SDLs), also called vertical external cavity surface emitting lasers [1,2], are a flexible semiconductor laser technology which provides high beam quality and high power at a range of wavelengths [3][4][5]. The use of optical pumping allows optimised design of the semiconductor multi-layer stack for optical properties and the external cavity allows the use of intra-cavity elements such as birefringent filters, frequency doubling crystals and semiconductor saturable absorber mirrors [6]. However, the distributed Bragg reflector (DBR) in SDLs adds significantly to the growth time and complexity and limits the thermal performance. In contrast, recently introduced DBR-free SDL technology [7][8][9] offers a potential solution to these limitations. DBR-free SDLs on diamond, emitting 6 W continuous wave (CW) output power at 1055 nm have been demonstrated in [8].Here, we report a DBR-free SDL emitting 10.1 W continuous wave output power at 1007 nm with an incident pump power of 40 W using a silicon carbide (SiC) intra-cavity heat spreader. We demonstrate wavelength tuning, reaching a maximum power of 0.7 W between 995 and 1020 nm by introducing birefringent filter into the cavity.

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confidence: 99%

DBR‐free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

et al. 2017

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“…A third power scaling approach utilizes double-side cooling, where the gain element is used as a transmissive element, as illustrated in figure 4(e). The benefits of such 'DBR-free VECSELs' consisting solely of the gain region have been recently explored in [74,75]. Another more exploratory design was demonstrated in [76], where the gain element was contacted onto a prism and total internal reflection was used instead of a DBR.…”

Section: Cavity Design and Power Scaling Considerationsmentioning

confidence: 99%

“…Such semiconductor-dielectric-metal mirror structures can also provide a larger reduction in the number of required DBR pairs than mere semiconductor-metal mirrors [21]. Finally, as already mentioned, the concept of reducing DBR thickness can be taken to its extreme by omitting the DBR [76] and making the implementation of double-side cooling more beneficial [74].…”

Section: Approaches For the Integration Of Gain Media And Reflectorsmentioning

confidence: 99%

Optically pumped VECSELs: review of technology and progress

Guina

Rantamäki

Härkönen

2017

J. Phys. D: Appl. Phys.

205

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“…This can be coupled with intra-or extra-cavity heat-spreaders, which are becoming a standard feature of high performance results. The most noteworthy variant of thermally managed VECSELs is the Membrane External Cavity Surface Emitting Laser (MECSEL) [34][35][36] where the periodic gain structure is acid-etched completely from (On a log-log scale) Peak power results for sub-ps VECSELs (blue) and MIXSELs (red) [28][29][30][31][32][33] . Results are distinguished by direct output (circle) external pulse compression (upward-triangle) and repetition-rate tunable (downwardtriangle).…”

Section: Vecsel Performancementioning

confidence: 99%

Tantalum pentoxide waveguides and microresonators for VECSEL based frequency combs

Sverre

Woods

Shaw

et al. 2018

Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII

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Tantalum pentoxide (Ta 2 O 5 ) is a promising material for mass-producible, multi-functional, integrated photonics circuits on silicon, exhibiting robust electrical, mechanical and thermal properties, as well as good CMOS compatibility. In addition, Ta 2 O 5 has been reported to demonstrate a non-linear response comparable to that of chalcogenide glass, in the region of 3-6 times larger than that of materials such as silica (SiO 2 ) or silicon nitride (Si 3 N 4 ). In contrast to Si-based dielectrics, it will accept trivalent ytterbium and erbium dopant ions, opening the possibility of on-chip amplification. The high refractive index of Ta 2 O 5 is consistent with small guided mode cross-section area, and allows the construction of micro-ring resonators. Propagation losses as low as 0.2 dB/cm have been reported. In this paper we describe the design of a planar Ta 2 O 5 waveguides optimised for the generation of coherent continuum with near infrared pulse trains at kW peak powers. The Pulse Repetition Frequency (PRF) of the VECSEL can be tuned to a sub-harmonic of the planar micro-ring and the optical pump power applied to the VECSEL can be adjusted so that mode-matching of the VECSEL pulse train with the micro-ring resonator can be achieved. We shall describe the fabrication of Ta 2 O 5 guiding structures, and the characterisation of their nonlinear and other optical properties. Characterisation with conventional lasers will be used to assess the degree of coherent spectral broadening likely to be achievable using these devices when driven by mode-locked VECSELs operating near the current state-of-art for pulse energy and duration.

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Semiconductor membrane external-cavity surface-emitting laser (MECSEL)

Cited by 75 publications

References 33 publications

DBR‐free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

DBR‐free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

Optically pumped VECSELs: review of technology and progress

Tantalum pentoxide waveguides and microresonators for VECSEL based frequency combs

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