Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon

Volet, Nicolas; Spott, Alexander; Stanton, Eric J.; Davenport, Michael; Chang, Lin; Peters, Jonathan; Briles, Travis C.; Vurgaftman, I.; Meyer, J. R.; Bowers, John E.

doi:10.1002/lpor.201600165

Cited by 47 publications

(21 citation statements)

References 48 publications

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“…For example, pulse mode laser emission up to 4-μm wavelength at room temperature was recently demonstrated utilizing GaSb type-II quantum well structures [74]. Several instances of heterogeneous integration of III-V mid-IR diode lasers and amplifiers with Si waveguides have been reported, including InP-based FabryPerot (F-P) and DFB lasers emitting at 2.0 μm [75] and 2.3 μm [76,77], GaSb-based F-P laser operating at 2.38 μm [78], and InP-based optical amplifier at 2.0 μm [79]. Figure 5 depicts the structure of an InP-based multi-quantum-well (MQW) F-P laser on Si emitting at 2.3 μm [76], which exemplifies a large class of heterogeneously integrated III-V lasers.…”

Section: Siliconmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Section: Siliconmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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“…The output power at the signal wavelength was measured with the OSA, and the transmission spectrum of the grating couplers was de-embedded to calculate the on-chip gain. As described in [19], the gain G as function of wavelength λ can be described with the following formula:…”

Section: Dutmentioning

confidence: 99%

27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power

Gasse¹,

Wang²,

Roelkens³

2019

Opt. Express

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Hybrid III-V-on-silicon semiconductor optical amplifiers with high-gain and highoutput-power are important in many applications such as transceivers, integrated microwave photonics and photonic beamforming. In this work we present the design, fabrication and characterization of high-gain, high-output-power III-V-on-silicon semiconductor optical amplifiers. The amplifiers support a hybrid III-V/Si optical mode to reduce confinement in the active region and increase the saturation power. A small-signal gain of 27 dB, a saturation power of 17.24 dBm and an on-chip output power of 17.5 dBm is measured for a current density of 4.9 kA/cm 2 (power consumption of 540 mW) at room temperature for an amplifier with a total length of 1.45 mm. The amplifiers were realized using a 6 quantum well InGaAsP active region, which was previously used to fabricate high-speed directly modulated DFB lasers, enabling their co-integration.

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“…Integrated f -2 f self-referencing without an optical amplifier [31] or an assist-laser requires an SHG conversion efficiency on the order of 40 W −1 . At this level, 5 µW of CW pump light (the typical power from a single comb line [11,32,33]) can be converted to 1 nW of signal light.…”

Section: Introductionmentioning

confidence: 99%

Efficient second harmonic generation in nanophotonic GaAs-on-insulator waveguides

et al. 2020

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Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense nonlinear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in GaAs-on-insulator waveguides with unprecedented efficiency of 40 W −1 for a single-pass device. This result is achieved by minimizing the propagation loss and optimizing phase-matching. We investigate surface-state absorption and design the waveguide geometry for modal phase-matching with tolerance to fabrication variation. A 2.0 µm pump is converted to a 1.0 µm signal in a length of 2.9 mm with a wide signal bandwidth of 148 GHz. Tunable and efficient operation is demonstrated over a temperature range of 45 ℃ with a slope of 0.24 nm/℃. Wafer-bonding between GaAs and SiO 2 is optimized to minimize waveguide loss, and the devices are fabricated on 76 mm wafers with high uniformity. We expect this device to enable fully integrated self-referenced frequency combs and high-rate entangled photon pair generation.

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Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon

Cited by 47 publications

References 48 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power

Efficient second harmonic generation in nanophotonic GaAs-on-insulator waveguides

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