Semiconductor Parametric Diodes in Microwave Computers

Hilibrand, J.; Mueller, C. W.; Stöcker, Christoph; Gold, Robert D.

doi:10.1109/tec.1959.5222685

Cited by 10 publications

(2 citation statements)

References 4 publications

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“…Even if the IGBT acts as an amplifier at the oscillation frequency of 20 MHz [11], the observed oscillations are not caused by the IGBT's gain, as proved later by simulations. This type of amplification has been studied in other fields, and it is commonly recognized as a parametric oscillation; similar to the operating principle of a varactor parametric oscillator, whose non-linear variable capacitor element is used to amplify [24].…”

Section: Parametric Oscillations In Igbtsmentioning

confidence: 99%

Improving the Short-Circuit Reliability in IGBTs: How to Mitigate Oscillations

Reigosa

Iannuzzo

Rahimo

et al. 2018

IEEE Trans. Power Electron.

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Abstract-In this paper, the oscillation mechanism limiting the ruggedness of IGBTs is investigated through both circuit and device analysis. The work presented here is based on a timedomain approach for two different IGBT cell structures (i.e., trench-gate and planar), illustrating the 2-D effects during one oscillation cycle. It has been found that the gate capacitance varies according with the strength of the electric field near the emitter, which in turn leads to charge-storage effects associated with low carrier velocity. For the first time, it has been discovered that a parametric oscillation takes place during the short-circuit in IGBTs, whose time-varying element is the Miller capacitance, which is involved in the amplification mechanism. This hypothesis has been validated through simulations and its mitigation is possible by increasing the electric field at the emitter of the IGBT with the purpose of counteracting the Kirk Effect.

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Section: Parametric Oscillations In Igbtsmentioning

confidence: 99%

Improving the Short-Circuit Reliability in IGBTs: How to Mitigate Oscillations

Reigosa

Iannuzzo

Rahimo

et al. 2018

IEEE Trans. Power Electron.

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“…Later on in 1956, Manley frequencies in an ideal nonlinear reactance, independent of the nonlinearity shape [2]. The operation principles and requirements of parametric subharmonic oscillation using the semiconductor varactors have been described in [3]. Since then, there have been several designs on parametric frequency dividers implemented on printed circuit board (PCB) using discrete components [4]- [11].…”

Section: Introductionmentioning

confidence: 99%

Passive Subharmonic Generation Using Memoryless Nonlinear Circuits

Safarian

Hashemi

2012

IEEE Trans. Microwave Theory Techn.

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A passive subharmonic generation and frequency downconversion method using a memoryless nonlinear circuit coupled to a linear passive resonator is presented. The frequency downconverter can be used to transfer the energy from a high-frequency signal to a lower frequency without requiring any dc power supply. In the synchronous mode, the passive downconverter acts as a self-powered frequency divider. The characteristics of the self-powered frequency downconverter have been studied analytically, and design tradeoffs have been shown for the specific case of a cross-coupled differential pair nonlinearity. As an example, a low-frequency prototype is implemented with discrete components. Analytical results and design procedures are verified in discrete and integrated prototypes.

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Capacitive effects in IGBTs limiting their reliability under short circuit

Reigosa

Iannuzzo

Rahimo

et al. 2017

Microelectronics Reliability

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Semiconductor Parametric Diodes in Microwave Computers

Cited by 10 publications

References 4 publications

Improving the Short-Circuit Reliability in IGBTs: How to Mitigate Oscillations

Improving the Short-Circuit Reliability in IGBTs: How to Mitigate Oscillations

Passive Subharmonic Generation Using Memoryless Nonlinear Circuits

Capacitive effects in IGBTs limiting their reliability under short circuit

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