Semiconductor Power Devices

Abstract

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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

“…4H-SiC 9.7 [90] 980 [90] 3.1 [213] 370 [90] In general, for UWBG materials to have impact on these applications, vertical device structures [90,214,215] similar to those utilized today for Si and SiC will need to be developed. While lateral UWBG devices such as HEMTs or MESFETs may be quite useful for high-frequency switching applications (and preliminary devices of this type have been realized in the AlGaN [157] and (AlGa) 2 O 3 [216] systems), lateral devices will likely be less useful for very high-voltage (defined somewhat arbitrarily as >5 kV) applications.…”

Pressure contact multi-chip packaging of SiC Schottky diodes

“…In this pressure packaging system, [1] for an optimal electrical and thermal contact, hence in the case of multi-chip modules, the uneven pressure distribution could affect the electrical and thermal properties.…”

“…It has already been used for large area thyristors and it is basically a semiconductor wafer compressed between two copper poles, using an intermediate contact to match the coefficient of thermal expansion (CTE) of the materials in direct contact [1].…”

“…The improved reliability of press-pack assemblies arises from the elimination of the weak elements of the traditional DBC based power modules, namely the solder and wirebonds [1]. In the case of IGBTs, this packaging method has been used by different manufacturers, with different approaches to establish a good contact between the multiple semiconductor chips and the intermediate contacts for matching the CTE.…”

Frequency-Dependent Description of the Thermal Energy Inputs in Each Layer of a Semiconductor by Using Bode Diagrams

“…The thermal connection of a power semiconductor on the heat sink is currently investigated in many research institutes and research facilities [1]- [3]. Each layer of the thermal connection has a number of functions in order to ensure the operation of the power semiconductor.…”