Semiconductor Sensitization by Microcrystals of MgIn2S4 on Wide Bandgap MgIn2O4

Sirimanne, Prasad Manjusr; Sonoyama, Noriyuki; Sakata, Tadayoshi

doi:10.1006/jssc.2000.8867

Cited by 35 publications

(20 citation statements)

References 20 publications

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“…2.1 eV suggests that a partial inverse structure should be a dark red color, which is, in fact, what is observed. 58,106 This vanishingly small energy difference is also observed in the cubic tin indium thiopinel, 108 several zinc spinels (e.g., ZnRh 2 O 4 109 or ZnGa 2 O 4 110 ) and the parent β-indium sulfide structure:…”

Section: 107mentioning

confidence: 68%

Screened hybrid and self-consistentGWcalculations of cadmium/magnesium indium sulfide materials

et al. 2011

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The cadmium and magnesium indium sulfides are medium-gap semiconductors demonstrating a propensity to form intermediate band materials when doped with transition metals. The inherent structural diversity exhibited by M +2 In2S4 thiospinels and related AB2X4 compounds often preclude definitive experimental determination of the band gap width and type of transition. Employing a series of traditional semi-local functionals (LDA, PBE, TPSS) and the screened hybrid HSE, band gaps, projected densities of states and band structures are calculated for the normal, full inverse and intermediate configurations of [Cd/Mg]8In16S32. Band structures and band gaps are also obtained via self-consistent many-body methods, using the static Coulomb-hole and screened exchange approximation to GW as a starting point for perturbative G0W0 calculations. Comparison to experiment indicates that HSE provides an accurate, computationally-efficient and relatively rapid means for predicting band gap properties in spinel-type photovoltaic materials.

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Section: 107mentioning

confidence: 68%

Screened hybrid and self-consistentGWcalculations of cadmium/magnesium indium sulfide materials

et al. 2011

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“…Since the generated holes move in the opposite direction, they accumulate in the valence band of the titanium dioxide, thereby increasing the efficiency of charge separation and improvement of photo-activity. [47 -49] The band gaps of the composites were calculated using electronic spectral data [50] to be 3.18 š 0.04 eV, close to the value for pure TiO 2 .…”

Section: Electronic Spectroscopymentioning

confidence: 99%

Preparation of a new composite by reaction of SnBu₃Cl with TiCl₄ in the presence of NH₄OHphotocatalytic degradation of indigo carmine

Coelho

Andrade

Lima

et al. 2010

Applied Organom Chemis

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Reactions of SnBu 3 Cl, TiCl 4 and NH 4 OH in ethanol followed by pyrolysis of the resultant product at 550• C, either in an atmosphere of oxygen or hydrogen, yielding new SnO 2 -TiO 2 based composites. In all, eight products were prepared with weight ratios of Sn-TiO 2 of 0% (1), 5% (2), 15% (3) and 30% (4) in O 2 and 0% (5), 5% (6), 15% (7) and 30% (8) in H 2 . XRD revealed diffraction patterns of TiO 2 (anatase) in the composites, but not those of SnO 2 due to its insufficient crystallinity. Scanning electron microscopy indicated the presence of Sn metal on the surface of composites 6-8. 119 Sn Mössbauer experiments revealed SnO 2 in all samples, and increasing amounts of tin in samples 7 and 8, respectively. The composites were used in experiments of photocatalytic degradation of indigo carmine dye. The catalytic experiments monitored by mass spectrometry and electronic spectroscopy revealed that, in the conditions of the experiments, composite 8 displays the highest activity. In addition, degradation products were characterised using electrospray ionization mass spectrometry (ESI-MS and ESI-MS/MS) data.

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“…Kokate et al [4] prepared a CdIn 2 S 4 photoelectrode with a conversion efficiency of 2.94% in an aqueous polysulfide solution obtained using a 200 W tungsten lamp as the light source. Sirimanne et al [5] prepared a MgIn 2 S 4 /MgIn 2 O 4 photoelectrode in an aqueous solution containing polysulfide solution that produced a photocurrent density of 30 mA/cm 2 using an external bias of þ0.7 V (vs. an Ag/AgCl electrode) and a light intensity of 250 mW/cm 2 . Sawant et al [6] prepared CdIn 2 S 4 thin films with an efficiency of 1.06% in an aqueous polysulfide solution obtained using a 500 W tungsten lamp as the light source.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrochemical study of ZnIn2Se4 electrodes fabricated using selenization of RF magnetron sputtered Zn–In metal precursors

Cheng

Fan

2012

International Journal of Hydrogen Energy

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Semiconductor Sensitization by Microcrystals of MgIn2S4 on Wide Bandgap MgIn2O4

Cited by 35 publications

References 20 publications

Screened hybrid and self-consistentGWcalculations of cadmium/magnesium indium sulfide materials

Screened hybrid and self-consistentGWcalculations of cadmium/magnesium indium sulfide materials

Preparation of a new composite by reaction of SnBu₃Cl with TiCl₄ in the presence of NH₄OHphotocatalytic degradation of indigo carmine

Photoelectrochemical study of ZnIn2Se4 electrodes fabricated using selenization of RF magnetron sputtered Zn–In metal precursors

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Semiconductor Sensitization by Microcrystals of MgIn2S4 on Wide Bandgap MgIn2O4

Cited by 35 publications

References 20 publications

Screened hybrid and self-consistentGWcalculations of cadmium/magnesium indium sulfide materials

Screened hybrid and self-consistentGWcalculations of cadmium/magnesium indium sulfide materials

Preparation of a new composite by reaction of SnBu3Cl with TiCl4 in the presence of NH4OHphotocatalytic degradation of indigo carmine

Photoelectrochemical study of ZnIn2Se4 electrodes fabricated using selenization of RF magnetron sputtered Zn–In metal precursors

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Preparation of a new composite by reaction of SnBu₃Cl with TiCl₄ in the presence of NH₄OHphotocatalytic degradation of indigo carmine