Semiconductor sensors for the detection of fluorocarbons, fluorine and hydrogen fluoride

Moritz, W.; Bartholomäus, Lars; Roth, U.; Filippov, V. I.; Vasiliev, A. A.; Terentjev, Alexander

doi:10.1016/s0003-2670(99)00339-6

Cited by 18 publications

(9 citation statements)

References 6 publications

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“…Similar devices were already used for the detection of oxygen, fluorine, hydrogen fluoride at room temperature, and fluorocarbons at higher temperatures [11]- [15]. Therefore, some properties of this structure, especially as an oxygen sensor, will be summarized in the following paragraphs.…”

Section: Introductionmentioning

confidence: 99%

Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

et al. 2006

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An LaF 3 layer was shown to improve the characteristics of field-effect gas sensors for room-temperature hydrogen monitoring. The Pt/LaF 3 interface leads to a Nernst-type response and a detection limit of 10-ppm hydrogen in atmospheric air. The response time was shown to be about 110 s and was independent of hydrogen concentration. A method for the stabilization of a long-term behavior of the sensor was successfully demonstrated. The mechanism of the sensor's response to hydrogen was shown to be different from that of the metal/insulator/semiconductor (MIS)-type sensors.Index Terms-Hydrogen sensor, metal/insulator/semiconductor (MIS) structure, room-temperature measurement, solid electrolyte.

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Section: Introductionmentioning

confidence: 99%

Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

et al. 2006

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“…[4] Another application, a Pt/LaF 3 gas sensor based on Pt and LaF 3 layers acting as the chemically sensitive components, has been used for the detection of fluorine, hydrogen fluoride, fluorocarbons, and oxygen. [14,15] The most often used techniques for depositing LaF 3 thin films have been physical vapor deposition (PVD) methods, e.g., electron-beam evaporation (EBE), [4,11,[16][17][18][19][20][21][22] ion-assisted deposition, [5,7,13,23] thermal evaporation, [3,[6][7][8]12,16,18,[24][25][26][27][28][29][30][31][32][33][34] ionbeam sputtering, [7,18,28] radio frequency magnetron sputtering, [35,36] and molecular beam epitaxy. [37][38][39][40][41] Only a few CVD methods have been used for depositing LaF 3 thin films, i.e., pyrolysis of a single source precursor La(hfa) 3 diglyme complex (hfa ¼ hexafluoroacetylacetonate), [42] or by using HF or...…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

Pilvi

Puukilainen

Arstila

et al. 2008

Chemical Vapor Deposition

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Lanthanum fluoride is a vacuum ultraviolet (VUV) transparent material which is widely used in optical applications. An atomic layer deposition (ALD) process is developed for depositing lanthanum fluoride thin films for the first time. LaF 3 films are grown at 225-350 -C using La(thd) 3 and TiF 4 as precursors. The crystallinity, morphology, composition, thicknesses, and refractive indices of the films are analyzed by X-ray diffraction/reflection (XRD/XRR), atomic force microscopy (AFM), scanning electron microscopy (SEM), time-of-flight elastic recoil detection analysis (TOF-ERDA), and UV-vis spectrophotometry. Electrical properties, such as permittivity and leakage current density, are also studied. An exceptionally high growth rate of about 5 Å per cycle is achieved at 225-250 -C. The films are polycrystalline, the refractive indices vary between 1.57 and 1.61, and the permittivity is 12.3. The impurities detected in the LaF 3 film are Ti, C, O, and H. The level of all of these tends to decrease with increase in the deposition temperature, and is only 3.5 at.-% at 350 -C.

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“…Metalinsulator-semiconductor structure gas sensors based on silicon or silicon carbide can be applied for the determination of HF, uorine and uorocarbons. 5 If selectivity among these gases is required, three sensors operated at three different temperatures have to be combined leading to a system where at least one of the sensors is insensitive at one of the temperatures. 6 A SnO 2based gas sensor is very sensitive to HF, 7 but because of its very poor selectivity a prior separation step using a gas chromatographic micro-column is required.…”

Section: Introductionmentioning

confidence: 99%

Visualisation and identification of peak exposure events in aluminium smelter pot rooms using hydrogen fluoride and aerosol real-time portable spectrometers

Skaugset

Berlinger

Radziuk³

et al. 2014

Environ. Sci.: Processes Impacts

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A recently developed novel portable real-time hydrogen fluoride spectrometer was used with an aerosol PM10 spectrometer under a PIMEX telemetric measurement strategy to visualize and identify simultaneous occupational air peak exposure events to hydrogen fluoride and PM10 aerosol sub-fractions in aluminium smelter pot rooms using Søderberg or Prebake anode technologies. The hydrogen fluoride and the aerosol concentration data measured during different work operations are plotted and evaluated applying the synchronised videos and air concentrations measured by the spectrometers. The main point-emission sources of HF and PM10 were identified and assessed. The major finding in the study was that the main source of PM10 and HF was partly open cells in a Søderberg pot room, whereas in a Prebake pot room, the point emissions of the two contaminants were associated with hot bath residues and hot replaced anodes. In order to prevent the simultaneous exposure to HF and PM10 among pot room workers it is important to prevent workers from being close to these point-sources under unfavourable ventilation. Storage of hot residues outside electrolytic cells without any point source ventilation should not occur.

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Semiconductor sensors for the detection of fluorocarbons, fluorine and hydrogen fluoride

Cited by 18 publications

References 6 publications

Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

Visualisation and identification of peak exposure events in aluminium smelter pot rooms using hydrogen fluoride and aerosol real-time portable spectrometers

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Semiconductor sensors for the detection of fluorocarbons, fluorine and hydrogen fluoride

Cited by 18 publications

References 6 publications

Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

Atomic Layer Deposition of LaF3 Thin Films using La(thd)3 and TiF4 as Precursors

Visualisation and identification of peak exposure events in aluminium smelter pot rooms using hydrogen fluoride and aerosol real-time portable spectrometers

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Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors