Semipolar GaN/GaInN LEDs with more than 1mW optical output power

Neubert, Barbara; Wunderer, Thomas; Brückner, Peter; Scholz, F.; Feneberg, Martin; Lipski, Frank; Schirra, M.; Thonke, Klaus

doi:10.1016/j.jcrysgro.2006.10.125

Cited by 26 publications

(41 citation statements)

References 8 publications

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“…Up to now, few work has been done to realize the semipolar f1011g GaN plane by this approach which is known to provide a better surface flatness than the f1122g plane [9]. Both planes have very similar polarity character as both are inclined about 608 with respect to the polar c-plane.…”

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confidence: 99%

Semipolar GaInN quantum well structures on large area substrates

Scholz

Schwaiger

Däubler

et al. 2011

Physica Status Solidi (b)

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In order to deposit semipolar GaN layers on foreign substrates while still starting the growth along the c-direction, we have etched trenches into r-plane and n-plane sapphire wafers. The GaN MOVPE growth then starts from c-plane-like sidewalls of these trenches, eventually leading to semipolar {1122} and {1011} surfaces with very good properties. GaInN quantum wells grown on such surfaces show very uniform properties on {1011} surfaces, but still reflect the stripe geometry on {1122} surfaces by a slightly larger In uptake at the stripe coalescence regions

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confidence: 99%

Semipolar GaInN quantum well structures on large area substrates

Scholz

Schwaiger

Däubler

et al. 2011

Physica Status Solidi (b)

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“…Figure 1(a) shows the XRD pattern of semipolar GaN with thickness of 2 m for X-ray incident toward the direction. The surface orientation of the sample was confirmed to be (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN. Figure 1(b) shows a schematic diagram of the direction, such as (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN on m-plane sapphire.…”

Section: Resultsmentioning

confidence: 96%

“…The surface orientation of the sample was confirmed to be (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN. Figure 1(b) shows a schematic diagram of the direction, such as (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN on m-plane sapphire. As reported by Baker et al the in-plane epitaxial relationship for (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN was [11][12][13][14][15][16][17][18][19][20][21] GaN 0001 sapphire and [1100] GaN sapphire.…”

Section: Resultsmentioning

confidence: 96%

“…[3][4][5][6] The absence of an internal electric field in nonpolar and semipolar GaN light emitting diodes (LEDs) is advantageous for achieving not only highly-efficient light emitters with thicker QWs, but also improved wavelength stability with injection currents. [7][8][9][10][11][12][13][14] On the other hand, to fabricate LEDs, it is important to develop well-defined etching processes that can allow reliable pattern transfer for a range of GaN planes. Most III-nitride etching currently performed employs dry * Author to whom correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

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Crystallographic Wet Chemical Etching of Semipolar GaN (11–22) Grown on <I>m</I>-Plane Sapphire Substrates

Kim¹,

Lee²,

Song³

et al. 2015

j nanosci nanotechnol

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This paper reports the etch rates and etched surface morphology of semipolar GaN using a potassium hydroxide (KOH) solution. Semipolar (11-22) GaN could be etched easily using a KOH solution and the etch rate was higher than that of Ga-polar c-plane GaN (0001). The etch rate was anisotropic and the highest etch rate was measured to be approximately 116 nm/min for the (1011) plane and 62 nm/min for the (11-20) plane GaN using a 4 M KOH solution at 100 °C, resulting in specific surface features, such as inclined trigonal cells.

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“…Thus, it can be realized on cheap and large substrates. High crystal quality has already been achieved [10] and LEDs with semipolar QWs based on m sized 3D structures have been reported [11][12][13][14][15]. Yet, these 3D topologies require specially adapted device processing.…”

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confidence: 99%

Blue to true green LEDs with semipolar quantum wells based on GaN nanostripes

Leute

Wang

Meisch

et al. 2015

physica status solidi c

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Recent advances of the performance of GaN based devices with semipolar quantum wells have been realized homoepitaxially on pseudo bulk substrates which are typically small in size and high in cost. These limitations fuel the search for cheap and large area alternatives. Heteroepitaxial growth on sapphire substrates is well established with excellent results for polar GaN structures ‐ the growth of semipolar gallium nitride on sapphire, however, presents unique challenges. In order to profit from our expertise in c‐plane samples, our semipolar gallium nitride growth experiments are based on growth in c‐direction. Using selective area epitaxy (SAE) on c‐oriented templates, we can grow 3D structures with semipolar side facets. These structures are typically several μm in size which constitutes further challenges for device processing. Reducing the size of the structures to a sub‐μm scale, we are able to bury our semipolar QWs within planar layers resulting in flat samples with c‐plane surfaces. In this contribution, we present our results concerning the structural quality and spectral properties of quantum wells emitting in the blue and green spectral range as well as light emitting diodes. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Semipolar GaN/GaInN LEDs with more than 1mW optical output power

Cited by 26 publications

References 8 publications

Semipolar GaInN quantum well structures on large area substrates

Semipolar GaInN quantum well structures on large area substrates

Crystallographic Wet Chemical Etching of Semipolar GaN (11–22) Grown on <I>m</I>-Plane Sapphire Substrates

Blue to true green LEDs with semipolar quantum wells based on GaN nanostripes

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