Sensing characteristics of in-plane polarized lead zirconate titanate thin films

Abstract

The sensing characteristics of in-plane polarized lead zirconate titanate (PZT) thin films were studied and compared with the through-thickness polarized PZT films. The in-plane polarized PZT films were deposited on ZrO2-passivated silicon substrates and had interdigitated electrode systems on the top surface; hence, they can be polarized in the film plane. This in-plane polarization configuration separates the electrode spacing and film thickness as independent variables; thus, the voltage sensitivity can be increased by using wider electrode spacing even for fixed film thickness. The results show that for films with a thickness of 1 μm the voltage sensitivity of in-plane polarized PZT films can be more than 20 times higher than that of the conventional, through-thickness polarized PZT films which were deposited on Pt-buffered silicon substrates.

Plasma emission controlled multi-target reactive sputtering for in-situ crystallized Pb(Zr,Ti)O3 thin films on 6″ Si-wafers

“…So, PZT thin films are deposited on conducting surfaces (e.g., Pt, RuO 2 , IrO 2 ), which act as a bottom electrode. Recently, there has been considerable research interest in developing PZT film based coplanar devices, i.e., devices with both electrodes on the surface of the PZT film [10][11][12][13]. The ferroelectric PZT films in coplanar capacitors may exhibit new features in the dielectric, ferroelectric, piezoelectric, and pyroelectric behavior (for example, by using interdigital electrodes, the d 33 piezoelectric mode can be employed instead of d 31 mode in PZT film based cantilevers [13]).…”

BST and Other Ferroelectric Thin Films by CCVD and Their Properties and Applications

“…PZT and La doped PZT (Pb 1-x/100 La x/100 (Zr y/100 Ti z/100 )O 3 , PLZT x/y/z) have been extensively investigated for applications, such as DRAM H. H. Kim et al, 1998), FRAM (Ramash et al, 2001; W. S. Kim et al, 1999), sensors and actuators for microelectromechanical systems (MEMS)(B. M. Xu, 1999;Polla and Francis, 1998), infrared detectors (Song et al, 2001;Kobune et al, 2001), due to their excellent dielectric, ferroelectric, piezoelectric, and pyroelectric properties. PLZT is transparent in the visible and near infrared region of the electromagnetic waves and has excellent electro-optical properties.…”

Effects of substrate on the crystalline structure and microwave dielectric properties of Bi1.5Mg1.0Nb1.5O7 sol–gel thin films

“…Therefore, the dielectric response of BMN thin film at microwave frequencies should be further explored for potential microwave applications. Moreover, compared with conventional planar capacitors with parallel plate electrodes configuration, the films are grown directly on the substrate in the coplanar device with interdigital electrodes structure, and the quality and orientation control of the films could be better than that of the planar capacitor [16][17][18][19].…”