Sensing characteristics of ISFET based on AlN thin film

Chiang, Jung Lung; Jan, Shiun-Sheng; Chen, Ying–Chung; Chou, Jung-Chuan

doi:10.1117/12.392108

Cited by 6 publications

(2 citation statements)

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“…A c c e p t e d M a n u s c r i p t Table 3 shows a comprehensive comparison of temperature characteristics of various pH sensing materials. Note that the response of other metal-oxide-based pH sensor at higher temperatures has also been investigated [25][26][27][28][29][30][31][32][33][34][35]. Table 3 shows the performance of the sensor for temperatures up to 65 °C.…”

Section: Sensitivitymentioning

confidence: 98%

Temperature effects on the performance of RuO2 thin-film pH sensor

Sardarinejad

Maurya

Khaled

et al. 2015

Sensors and Actuators A: Physical

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Section: Sensitivitymentioning

confidence: 98%

Temperature effects on the performance of RuO2 thin-film pH sensor

Sardarinejad

Maurya

Khaled

et al. 2015

Sensors and Actuators A: Physical

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“…The ISFET is similar to metal oxide-semiconductor field-effect transistor (MOSFET) with no metal gate electrode. Several dielectric membranes were used as pH-sensing elements because of their higher response including aluminum nitride (AlN) [2], tantalum pentoxide (Ta 2 O 5 ) [3], and aluminum oxide (Al 2 O 3 ) [4]. The ISFET has many advantages over conventional glass electrodes such as miniaturization, high input impedance, easy to mass product, and suitable for biosensor applications.…”

Section: Introductionmentioning

confidence: 99%

pH sensing characteristics of EGFET based on Pd-doped ZnO thin films synthesized by sol-gel method

Ali

Dhaher

Abdullateef

2015

2015 Third International Conference on Technological Advances in Electrical, Electronics and Computer Engineering (TAEECE)

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This work presents the fabrication and characterization of Palladium-doped Zinc Oxide (Pd-ZnO) thin films for Extended-Gate Field-Effect Transistor (EGFET) pH sensor. The films were fabricated on p-type silicon Si(111) substrates using sol-gel technique. The structure, surface morphology, and electrical properties Pd-ZnO films were studied. The doped ZnO films have uniform, homogenous and free of cracks surfaces. The prepared films were used as pH sensor head to immerse into buffer solutions with different pH. The sensing performance of the fabricated films increased with increasing the doping concentration. The 4% Pd-doped ZnO film based EGFET sensor exhibited voltage sensitivity of 27.86 mV/pH and linearity of 0.97855 in the linear region with pH range from (5-11) which was better than the 2% Pd-doped ZnO based EGFET sensor voltage sensitivity of 24.41 mV/pH and linearity of 0.97746.

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