2010
DOI: 10.1016/j.snb.2009.11.006
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Sensing properties of atmospheric plasma-sprayed WO3 coating for sub-ppm NO2 detection

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Cited by 146 publications
(45 citation statements)
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“…Since NO 2 is an oxidizing agent, changes in material resistance should be mainly caused by gas-tungsten oxide chemisorption processes rather than chemical bonds with atomic oxygen [30]. Therefore, NO 2 was adsorbed onto tungsten oxide surface and the oxygen of NO 2 acts as an acceptor, extracting electrons from the conduction band of the oxide, according to the following equations [31][32][33].…”
Section: Gas-response Measurementsmentioning
confidence: 99%
“…Since NO 2 is an oxidizing agent, changes in material resistance should be mainly caused by gas-tungsten oxide chemisorption processes rather than chemical bonds with atomic oxygen [30]. Therefore, NO 2 was adsorbed onto tungsten oxide surface and the oxygen of NO 2 acts as an acceptor, extracting electrons from the conduction band of the oxide, according to the following equations [31][32][33].…”
Section: Gas-response Measurementsmentioning
confidence: 99%
“…Among them, tungsten trioxide (WO 3 ) is used in many electronic devices because of its tunable properties of chemical composition, surface morphological, optical absorption in visible range and high the rmalstability 6,7 . Several preparation techniques have been used to deposit tungsten oxide thin films, including sol-gel, spray pyrolysis, chemical vapour deposition, RF sputtering, plasma evaporation, electrodeposition, etc [8][9][10][11][12][13][14][15][16][17][18] . In fact, spray pyrolysis is one of the most versatile techniques to deposit oxide films, allowing the control of many properties of the films by changing the preparation parameters of the technique.…”
Section: Introductionmentioning
confidence: 99%
“…For most of these applications, thin films of WO3 with nanometer thickness are usually deposited on glass or polymeric substrates. A variety of conventional deposition methods have been used to prepare WO3 films, such as direct current (dc) or radio frequency (rf) magnetron sputtering [10][11][12][13][14][15][16][17][18], sol-gel methods [19][20][21], plasma spraying method [22], electron beam evaporation [23,24],thermal evaporation [25,26] and hydrothermal methods [27].Tungsten oxide has a cubic structure which is also described by "empty-perovskite" type structure formed by WO3. In octahedral structure atoms are share at corners [8,10].…”
Section: Introductionmentioning
confidence: 99%