2020
DOI: 10.1002/jnm.2851
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Sensitivity analysis and uncertainty estimation in small‐signal modeling forInP HBT(invited paper)

Abstract: In this paper, a sensitivity analysis and uncertainty estimation of small‐signal model for InP HBT is presented. Analytical expressions for sensitivity are derived in terms of the measured S‐parameters based on the direct intrinsic parameters extraction. Furthermore, the uncertainties of the intrinsic parameters vs frequency are discussed to give more reliable extraction results. The optimal solutions of the parameters are obtained by utilizing sensitivity analysis. In the frequency range of 45 MHz‐40GHz, good… Show more

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Cited by 2 publications
(2 citation statements)
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“…Nevertheless, for the sake of completeness, it should be underlined that the channel temperature is higher than the ambient temperature because of the heat generated by the self-heating effects, which are strongly dependent not only on the dissipated power level but also on the thickness and thermal conductivity of the materials [13,[29][30][31][32][33][34][35][36]. Furthermore, it is worth mentioning that the extraction of the equivalent-circuit elements may be inevitable affected by the uncertainty inherent in measurements and that, in addition, the model topology itself is an approximation of the device physics [37][38][39][40][41][42][43], which in turn may impact on the achieved temperature-dependent findings.…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, for the sake of completeness, it should be underlined that the channel temperature is higher than the ambient temperature because of the heat generated by the self-heating effects, which are strongly dependent not only on the dissipated power level but also on the thickness and thermal conductivity of the materials [13,[29][30][31][32][33][34][35][36]. Furthermore, it is worth mentioning that the extraction of the equivalent-circuit elements may be inevitable affected by the uncertainty inherent in measurements and that, in addition, the model topology itself is an approximation of the device physics [37][38][39][40][41][42][43], which in turn may impact on the achieved temperature-dependent findings.…”
Section: Introductionmentioning
confidence: 99%
“…The aim is to have an overview from different perspectives on the challenges that arise in this fast‐evolving research field. The high‐quality contributions on modeling and characterization of electron devices give an in‐depth understanding on the crucial role of the accurate modeling, 1–6 and the benefits of this are clearly appreciable when active circuits, such as power amplifiers, 6–8 passive circuits, 9,10 and antennas, 11–13 have to be designed or investigated at such high frequencies. In addition to the aforementioned topics, data analyzes for specific application such as imaging are included 14 …”
mentioning
confidence: 99%