Sensitivity Analysis of Physically Doped, Charge Plasma and Electrically Doped TFET Biosensors

Biswas, Arijit; Rajan, Chithraja; Samajdar, Dip Prakash

doi:10.1007/s12633-021-01461-1

Cited by 10 publications

(2 citation statements)

References 31 publications

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“…The sensitivity profile of dielectrically modulated biosensors can be furthermore investigated considering its variation from ambient temperature. It is evident from Fig 8A that I OFF increases with increase in temperature as recombination rate increases in BM-SO-HTFET biosensor for k = 7 and k = 12 [ 34 ]. Insignificant change in I ON at higher gate voltages is observed.…”

Section: 2 Impact Of Temperature On S Onmentioning

confidence: 99%

Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with Si0.6Ge0.4 source biosensor considering non-ideal factors

Ghosh,

Nelapati,

Saha

et al. 2024

PLoS ONE

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This article provides insights in designing a dielectrically modulated biosensor by adopting high-k stacked gate oxide proposition in a bi-metal hetero-juncture Tunnel Field Effect Transistor (BM-SO-HTFET) with Si0.6Ge0.4 source. The integrated effect of heterojunction and stacked gate oxide leads to enhanced electrical performance of the proposed device in terms of carrier mobility and suppressed leakage current. Nano-cavity engraved beneath the bi-metal gate structure across the source/channel end acts the binding site of the biomolecules to be detected. This Configuration leads to improved control of biomolecules over source/channel tunnelling rate and the same is reflected in the sensing ability of the device while extracting the ON current sensitivity (SON) of the sensor. The reported biosensor is simulated using Silvaco ATLAS calibrated simulation framework. The analysis of the device sensitivity is carried out varying dielectric constants (k) of various biomolecules, both neutral as well as charged. Our study reveals that BM-SO-HTFET with Ge mole fraction composition x = 0.4 exhibits sensitivity as high as 4.1 × 1010 for neutral biomolecules and 3.2 × 1011 for positively charged biomolecules with k = 12. Furthermore, a transient response profile for the drain current with various biomolecules is explored to determine the varying settling time. From the simulation results, it is noted that BM-SO-HTFET exhibits ON current sensitivity of 4.1 × 1010 and 3.2 × 1011 for neutral and charged biomolecules respectively. In addition to this, for highly sensitive and real time detection of biomolecules, the impact of temperature and certain non-ideal factors drifting from ideal case of fully filled cavity have also been considered to analyze its optimum sensing performance.

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Section: 2 Impact Of Temperature On S Onmentioning

confidence: 99%

Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with Si0.6Ge0.4 source biosensor considering non-ideal factors

Ghosh,

Nelapati,

Saha

et al. 2024

PLoS ONE

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“… 9 – 11 MOSFET-based biosensors are inferior in terms of biomolecule detection and power consumption, as compared to TFET-based biosensors exhibiting lower OFF current and lower subthreshold swing (< 60 mV/dec). 12 – 15 However, MOSFET-based biosensors produce more ON current and are useful in the circuitry. Here, using the HD oxide layer (SiO 2 + TiO 2 ) and the HM AlGaAs/Ge, we upgrade the characteristics of both MOSFET and TFET-based biosensors.…”

Section: Introductionmentioning

confidence: 99%

A Novel HM-HD-RFET Biosensor for Label-Free Biomolecule Detection

Biswas

Rajan²,

Samajdar

2022

J. Electron. Mater.

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The mortality of people worldwide caused by COVID-19 has enhanced the research interest to design and develop power-efficient, low-cost, and sensitive biosensors to detect a wide range of biomolecules or foreign particles that can cause severe negative impact on humans. A novel Bio-RFET biosensor with hetero-material (HM) for source/channel and drain regions and hetero-dielectric (HD) is proposed, which acts as an n -MOSFET or a p -MOSFET and n -TFET or p -TFET. This HM-HD-RFET biosensor senses the biomolecules by the label-free dielectric modulation (DM) technique. When the biomolecules are present in the nanocavity, the biosensor can detect the biomolecules without labeling costs. It also changes the dielectric polarization within the nanocavities, and causes a drain current variation in the presence of an electric field. In this research article, (SiO 2 + TiO 2 ) and an AlGaAs/Ge-based HD-HM-RFET have been analyzed for their use in biosensing. We found that the proposed device exhibits higher sensitivity as compared to a SiO 2 + HfO 2 -HM-RFET and a Si-based SiO 2 + TiO 2 -RFET for varying dielectric constants ( K ) from K = 20–80 and charge densities in the range − 5 × 10 11 to 1 × 10 13 C/cm 2 . Further, it can be noticed that n -SiO 2 + TiO 2 -HM-TFET possesses the highest I d -V gs sensitivity of 5.09 × 10 13 , I ON /I OFF ratio of 1.23 × 10 9 , lowest SS of 20.3 mV/dec, and V th of 1.48 V.

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Modeling and performance analysis of Nanocavity Embedded Dopingless T-shaped Tunnel FET with high-K gate dielectric for biosensing applications

Priya

Venkatesh²,

Agarwal³

et al. 2022

Appl. Phys. A

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Sensitivity Analysis of Physically Doped, Charge Plasma and Electrically Doped TFET Biosensors

Cited by 10 publications

References 31 publications

Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with Si0.6Ge0.4 source biosensor considering non-ideal factors

Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with Si0.6Ge0.4 source biosensor considering non-ideal factors

A Novel HM-HD-RFET Biosensor for Label-Free Biomolecule Detection

Modeling and performance analysis of Nanocavity Embedded Dopingless T-shaped Tunnel FET with high-K gate dielectric for biosensing applications

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