Sensitivity Enhancement of a Vertical-Type CMOS Hall Device for a Magnetic Sensor

Oh, Saewoong; Jang, Byung-Jun; Chae, Hyungil

doi:10.26866/jees.2018.18.1.35

Cited by 10 publications

(6 citation statements)

References 12 publications

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“…For a VHD, the magnetic field is applied in the horizontal direction to P-substrate as in Figure 3 b, and the Hall signal is formed in current type (I HALL ). Due to the short circuit effect, the sensitivity of VHDs is usually lower than that of HHDs [ 5 , 7 ], so an HHD is used in this work to achieve high sensitivity. Many HHD structures are introduced so far, and among them, we use a cross-sectional structure since it is the most optimized one for the sensitivity [ 13 , 14 ].…”

Section: Proposed Hall Sensor Architecturementioning

confidence: 99%

“…Commercial CMOS processes do not give designers the freedom to choose materials, so instead, sensitivity is generally enhanced by modifying the Hall device shape. Various Hall device structures such as four contact (4F) or multiple-terminal ones [ 5 , 6 , 7 ] have been attempted, but the improvement is not significant due to limitation on the material used. Therefore, the amplification process in a Hall sensor is essential to achieve a high signal-to-noise ratio (SNR), and a low-noise operational amplifier (op-amp) is very often used in the system.…”

Section: Introductionmentioning

confidence: 99%

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Low Power CMOS-Based Hall Sensor with Simple Structure Using Double-Sampling Delta-Sigma ADC

Lee

et al. 2020

Sensors

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A CMOS (Complementary metal-oxide-semiconductor) Hall sensor with low power consumption and simple structure is introduced. The tiny magnetic signal from Hall device could be detected by a high-resolution delta-sigma ADC in presence of offset and flickering noise. Also, the offset as well as the flickering noise are effectively suppressed by the current spinning technique combined with double sampling switches of the ADC. The double sampling scheme of the ADC reduces the operating frequency and helps to reduce the power consumption. The prototype Hall sensor is fabricated in a 0.18-µm CMOS process, and the measurement shows detection range of ±150 mT and sensitivity of 110 µV/mT. The size of active area is 0.7 mm2, and the total power consumption is 4.9 mW. The proposed system is advantageous not only for low power consumption, but also for small sensor size due to its simplicity.

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Section: Proposed Hall Sensor Architecturementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low Power CMOS-Based Hall Sensor with Simple Structure Using Double-Sampling Delta-Sigma ADC

Lee

et al. 2020

Sensors

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“…The conventional loop [23][24][25][26][27] or helical/helix shaped [28][29][30] antennas used as magnetic field antennas cannot produce the required high magnetic field intensity with the constraint of the low input feed power for the near-field magnetic field testing as per the NFIT setup of Figure 2. The embedding of high permeability materials such as ferrites in the antenna structure (sandwiching between the antenna radiator and ground plane as in [31,32]) could enhance the intensity of the generated magnetic field by the antenna.…”

Section: Design and Simulationmentioning

confidence: 99%

Near-Field Immunity Test Method for Fast Radiated Immunity Test Debugging of Automotive Electronics

et al. 2019

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This study presents a near-field immunity test (NFIT) method for the fast debugging of radiated susceptibility of industrial devices. The proposed approach is based on the development of an NFIT setup which comprises of developed near-field electric and magnetic field probes and device under test (DUT). The developed small-size and handy near-field testing probes inject the high electric (up to 1000 V/m) and magnetic (up to 2.4 A/m) fields on the DUT in the radar pulse ranges (1.2 to 1.4 GHz and 2.7 to 3.1 GHz) with the lower fed input power (up to 15 W) from the power amplifier in the developed NFIT setup. The proof of concept is validated with the successful near-field immunity debugging of an electric power steering (EPS) device used in the automotive industry with the developed NFIT setup. The radiated susceptibility debugging test results of developed NFIT method and conventional method of ISO 11452-2 test setup turned out to be close to each other for the tested DUT in immunity performance. The proposed procedure has advantages of industry usefulness with fast, handy, and cost-effective radiated immunity debugging of the DUT without the requirement of large antenna, high-power amplifiers, optical DUT connecting harness, and an anechoic chamber as needed in ISO 11452-2 standard setup for the debugging analysis.

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“…Nanoparticle arrays are now patterned more and more precisely with various methods, such as sub-micron sphere self-assembly lithography techniques [1][2][3][4][5], selective ion irradiation [6][7][8][9] and film growth technologies [10,11]. Ferromagnetic nanomaterials are of special interest due to their potential application in magnetic data storage and spintronic devices, such as MRAM, microwave oscillators, magnetic nanosensors [12][13][14][15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Finite Length Effects on Switching Mechanisms in Chains of Magnetic Particles

Kuźma

Zieliński

2020

Magnetochemistry

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Periodic systems of magnetic nanoparticles are now of interest as they support GHz spin waves. Their equilibrium configurations, switchable with the external magnetic field, are crucial for such applications. We study infinite and finite chains of particles of two shapes (i) ellipsoidal and (ii) rectangular stripes with long axes perpendicular to the chain axis. A variable magnetic field is applied parallel to the long axes. Micromagnetic simulations are compared with the corresponding discrete spin models (Stoner-Wohlfarth model, S-W). An antiferromagnetic configuration is the ground state for all the systems at vanishing field but a ferromagnetic configuration occurs when the field is strong enough. The switching of the infinite chains to the reversed ferromagnetic configuration proceeds directly for the ellipsoids and by an intermediate configuration, in which the magnetization within the particle is non-uniform, in the case of the stripes. The non-uniform configurations are well represented by tilted states in S-W model. Important differences are found in the finite analogs: the switching of ellipsoids becomes multistage and starts from the innermost particles relatively well reproduced with S-W model, whereas the reversal of the stripes, starts from the outermost particles and has no analog in S-W model. Practical consequences of the findings are discussed.

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Sensitivity Enhancement of a Vertical-Type CMOS Hall Device for a Magnetic Sensor

Cited by 10 publications

References 12 publications

Low Power CMOS-Based Hall Sensor with Simple Structure Using Double-Sampling Delta-Sigma ADC

Low Power CMOS-Based Hall Sensor with Simple Structure Using Double-Sampling Delta-Sigma ADC

Near-Field Immunity Test Method for Fast Radiated Immunity Test Debugging of Automotive Electronics

Finite Length Effects on Switching Mechanisms in Chains of Magnetic Particles

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