Sensitivity of carbon nanotube based junctionless ion sensitive field effect transistor (CNTJLISFET) for HfO&lt;inf&gt;2&lt;/inf&gt; and ZrO&lt;inf&gt;2&lt;/inf&gt; gate dielectrics: Experimental and theoretical investigation

Thakur, Hiranya Ranjan; Keshwani, Gaurav; Dutta, Jiten Chandra

doi:10.1109/iespc.2017.8071880

Cited by 2 publications

(3 citation statements)

References 17 publications

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“…The mass action law states that multiplying the free hole concentration p and the free electron n is equal to the square of the intrinsic carrier concentration ni under thermal equilibrium. The carrier concentration can be given as follows, based on Boltzmann statistics [29]: (13) where EV, EC, and E f are the upper energy level of the valence band, the lower value level of the conduction band, and the Fermi level, respectively. If p=[H + ], n=[OH -], and n=p from (10); if EC−Ef=Ef-Ev=Eg/2 from [30] Thus, we can rewrite ( 12) and ( 13) as follows:…”

Section: Electrolyte Ph Change Modelmentioning

confidence: 99%

“…It is well known that the gate dielectric is in direct contact with the electrolyte solution, which determines the starting sensitivity of these devices. As the SiO2 gate dielectric shows a low response sensitivity and poor stability, other inorganic materials such as Al2O3 [7,8], Si3N4 [6,9], Ta2O5 [9][10][11], HfO2 [12][13][14][15] and ZrO2 [12][13][14] with their enhanced stability and sensitivity have also been investigated. The pervious works of using high-k materials as an ISFETs gate used numerical or mathematical modeling simulations [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

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Performance analysis of high-k materials as stern layer in ion-sensitive field effect transistor using commercial TCAD

et al. 2019

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High-k materials as a STERN Layer for Ion-Sensitive-Field-Effect-Transistor (ISFET) have improved ISFET sensitivity and stability. These materials decrease leakage current and increase capacitance of the ISFET gate toward highest current sensitivity. So far, many high-k materials have been utilized for ISFET, yet they were examined individually, or using numerical solutions rather than using integrated TCAD environment. Exploiting TCAD environment leads to extract ISFET equivalent circuit parameters and performs full analysis for both device and circuit. In this study we introduce a comprehensive investigation of different high-k material, Tio2, Ta2O5, ZrO2, Al2O3, HfO2 and Si3N4 as well as normal silicon dioxide and their effects on ISFET sensitivity and stability. This was implemented by developing commercial Silvaco TCAD rather than expensive real fabrication. The results confirm that employing high-k materials in ISFET outperform normal silicon dioxide in terms of sensitivity and stability. Further analysis revealed that Titanium dioxide showed the highest sensitivity followed by two groups HfO2, Ta2O5 and ZrO2, Al2O3 respectively. Another notable exception of Si3N4 that is less than other materials, but still have higher sensitivity than normal silicon dioxide. We believe that this study opens new directions for further analysis and optimization prior to the real cost-ineffective fabrication.

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Section: Electrolyte Ph Change Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Performance analysis of high-k materials as stern layer in ion-sensitive field effect transistor using commercial TCAD

et al. 2019

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show abstract

“…It is well known that the gate dielectric is in direct contact with the electrolyte solution, which determines the starting sensitivity of these devices. As the SiO2 gate dielectric shows a low response sensitivity and poor stability, other inorganic materials such as Al2O3 [8,9], Si3N4 [7,10], Ta2O5 [9,11], HfO2 [12][13][14][15] and ZrO2 [12][13][14] with their enhanced stability and sensitivity have also been investigated.…”

Section: Introductionmentioning

confidence: 99%

Impact of Gouy-Chapman-Stern model on conventional ISFET sensitivity and stability

et al. 2019

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Utilizing Gouy-Chapman-Stern model can improve ISFET sensitivity and stability using Stern layer in direct contact with electrolyte in ISFET sensing window. However, this model remains a challenge in mathematical way, unless it's reapplied using accurate simulation approaches. Here, we developed an approach using a commercial Silvaco TCAD to reapply Gouy-Chapman-Stern model as ISFET sensing membrane to investigate its impact on sensitivity and stability of conventional ISFET. Sio2 material and high-k Ta2O5 material have been examined based on Gouy-Chapman and Gouy-Chapman-Stern models. Results shows that the ISFET sensitivity of SiO2 sensing membrane is improved from ~38 mV/pH to ~51 mV/pH and the VTH shift stability is also improved. Additionally, the results indicate that the sensitivity of Ta2O5 is 59.03 mV/pH that hit the Nearnst Limit 59.3 mV/pH and achieves good agreements with mathematical model and previous experimental results. In conclusion, this investigation introduces a real validation of previous mathematical models using commercial TCAD approach rather than expensive fabrication that paves the way for further analysis and optimization.

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Sensitivity of carbon nanotube based junctionless ion sensitive field effect transistor (CNTJLISFET) for HfO<inf>2</inf> and ZrO<inf>2</inf> gate dielectrics: Experimental and theoretical investigation

Cited by 2 publications

References 17 publications

Performance analysis of high-k materials as stern layer in ion-sensitive field effect transistor using commercial TCAD

Performance analysis of high-k materials as stern layer in ion-sensitive field effect transistor using commercial TCAD

Impact of Gouy-Chapman-Stern model on conventional ISFET sensitivity and stability

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