Sensitization Distance and Acid Generation Efficiency in a Model System of Chemically Amplified Electron Beam Resist with Methacrylate Backbone Polymer

Kozawa, Takahiro; Tagawa, Seiichi; Kai, Toshiyuki; Shimokawa, Tsutomu

doi:10.2494/photopolymer.20.577

Cited by 61 publications

(57 citation statements)

References 49 publications

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“…In PMMA resists, the molecular weight of ionized molecules is reduced through side-chain detachment and subsequent main-chain scission near the ionization and electronic excitation points. 73) It has been reported that the energy distributions correspond well to developed patterns for PMMA resists. 61,74) Therefore, the accumulated energy profile can be assumed to well represent the distribution of ionization and electronic excitation.…”

Section: Energy Deposition (Ionization and Electronicmentioning

confidence: 65%

“…Once the shape of the distribution is known, the thermalization distance in resist films can be estimated by analyzing the dependence of acid yield on acid generator concentration, 90) similarly to the estimation using Onsager's theory. 95) Assuming the above exponential distribution, the thermalization distances in PHS and PMMA films have been estimated to be approximately 4 90) and 6 nm, 73) respectively. An ionized molecule with a positive charge (radical cation) and an electron with a negative charge interact through the Coulomb interaction.…”

Section: Thermalization and Initial Configuration Of Spursmentioning

confidence: 99%

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Radiation Chemistry in Chemically Amplified Resists

Kozawa

Tagawa

2010

Jpn. J. Appl. Phys.

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336

319

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Historically, in the mass production of semiconductor devices, exposure tools have been repeatedly replaced with those with a shorter wavelength to meet the resolution requirements projected in the International Technology Roadmap for Semiconductors issued by the Semiconductor Industry Association. After ArF immersion lithography, extreme ultraviolet (EUV; 92.5 eV) radiation is expected to be used as an exposure tool for the mass production at or below the 22 nm technology node. If realized, 92.5 eV EUV will be the first ionizing radiation used for the mass production of semiconductor devices. In EUV lithography, chemically amplified resists, which have been the standard resists for mass production since the use of KrF lithography, will be used to meet the sensitivity requirement. Above the ionization energy of resist materials, the fundamental science of imaging, however, changes from photochemistry to radiation chemistry. In this paper, we review the radiation chemistry of materials related to chemically amplified resists. The imaging mechanisms from energy deposition to proton migration in resist materials are discussed.

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Section: Energy Deposition (Ionization and Electronicmentioning

confidence: 65%

Section: Thermalization and Initial Configuration Of Spursmentioning

confidence: 99%

Radiation Chemistry in Chemically Amplified Resists

Kozawa

Tagawa

2010

Jpn. J. Appl. Phys.

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336

319

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“…The thermalization distance in the film of a typical resist backbone polymer, poly(4-hydroxystyrene) (PHS), has been estimated to be 3.2 nm [22]. The thermalization distance in the poly(methyl methacrylate) films has been also estimated to be approximately 6 nm [34]. From these experimental results, the thermalization distance in the resist films consisting of bezene and alkyl chains is considered to be roughly 4 nm.…”

Section: Resultsmentioning

confidence: 99%

Challenges in Development of Sub-10 nm Resist Materials

Kozawa

Santillan

Itani

2016

J. Photopol. Sci. Technol.

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In the sub-10 nm resist processes for the high volume production of semiconductor devices, the suppression of stochastic phenomena is a critical issue. In this study, the resist processes of line-and-space patterns with sub-10 nm half-pitches were calculated by the Monte Carlo method on the basis of the sensitization and reaction mechanisms of chemically amplified extreme ultraviolet (EUV) resists. The effects of thermalization distance and effective reaction radius for deprotection on line edge roughness (LER) and stochastic defect generation were evaluated for the different halt-pitches in the sub-10 nm region.

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“…[8] The phenomena observed in PMMA may be one of the reasons why such a drastic sensitivity difference between the two was observed. Calculation of UV absorption at 13.5 nm PAG absorption is a key factor to understand the photolithographic properties under any exposure systems.…”

Section: Uv Absorption and Transparency Measurementsmentioning

confidence: 99%

PAG Study in EUV Lithography

Asakura¹,

Yamamoto²,

Nishimae³

et al. 2009

J. Photopol. Sci. Technol.

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Extreme Ultraviolet (EUV) has already achieved the initial requirements for 32 nm DRAM half pitch lithography rule and is known as one of the most promising next generation lithography techniques to be realized for 22 nm patterning technology though strict requirements for the power of the light sources, lithographic performance of the photoresist and the manufacturing and inspection of masks are still remaining,.In this report, we investigated the photolithographic characteristics of Photoacid Generator (PAG) additive approach in EUV lithography with different polymer platforms and sulfonium-type PAGs compared with other exposure techniques to understand the relationship between lithography results and photoresist materials. Four different sulfonium nonafluorobutanesulfonate; triphenylsulfonium nonafluorobutanesulfonate (TPS), tri(4-methoxy-3,5-dimethylphenyl) sulfonium nonafluorobutanesulfonate (MDP), tri(4-methoxy-3-methylphenyl)sulfonium nonafluorobutanesulfonate (MMP) and tri(4-methoxy-3-phenylphenyl)sulfonium nona-fluorobutanesulfonate (MPP) were employed as PAG in order to study the fundamental properties, such as sensitivity, photo-efficiency, lithographic performance , in the two different model formulations, poly(hydroxystyrene) (PHS) type and poly(methacrylates)-type, under three different exposures of 193 nm (ArF), Electron Beam (EB) and EUV.

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Sensitization Distance and Acid Generation Efficiency in a Model System of Chemically Amplified Electron Beam Resist with Methacrylate Backbone Polymer

Cited by 61 publications

References 49 publications

Radiation Chemistry in Chemically Amplified Resists

Radiation Chemistry in Chemically Amplified Resists

Challenges in Development of Sub-10 nm Resist Materials

PAG Study in EUV Lithography

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