Sensitization of silicon by singlet exciton fission in tetracene

Abstract

Singlet fission can split a high energy singlet exciton and generate two lower energy triplet excito ns. This process has shown near 200 percent triplet exciton yield. Sensitizing solar cells with singlet fission material, it can potentially increase the power conversion efficiency limit from 29 percent to 35 percent. Singlet fission in the tetracene is known to be efficient, and the energy of the triplet excitons are energetically matched to the silicon bandgap. In this work, we designed an optical measurement with an external magnetic field to determine the efficiencies of triplet exciton transfer from tetracene to silicon. Using this method, we have found that a passivation layer of 8 angstroms of hafnium oxynitride on silicon allows efficient triplet exciton transfer around 133 percent.

Directed self-assembly of viologen-based 2D semiconductors with intrinsic UV–SWIR photoresponse after photo/thermo activation

“…This will increase cost and complexity of the desirable device. As for solar energy conversion, photoresponse band of the widely used commercial photovoltaic material silicon is about 300-1200 nm 6,7 . This range far from covers the whole solar spectrum (∼295-2500 nm), resulting in limited energy conversion fields of Si-based solar cells 2,8 .…”

An exciting boost for solar cells

“…Economic factors drive decision-making in the energy sector, and thus, for greater adoption of solar cells, researchers are continually driven to make these devices more durable and more efficient at converting sunlight into electricity. On page 90, Einzinger et al 1 report a potential way to increase the efficiency of solar cells.…”

“…A singlet-fission solar cell. Einzinger et al1 report experiments on a silicon solar cell that has its top surface covered by an ultrathin coating of hafnium oxynitride. A layer of the material tetracene is deposited on top of this coating.…”

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

“…Silicon‐based materials are extensively used in optoelectronic and microelectronic devices, chiefly on account of their relative compatibility with complementary metal–oxide–semiconductor (CMOS) technology and their low cost . Nonetheless, commercial silicon photodetectors can only perform at wavelengths below 1100 nm, remaining transparent at longer wavelengths, due to the 1.12 eV bandgap of crystalline silicon.…”