2008
DOI: 10.18524/1815-7459.2008.2.114446
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Sensor Arrays Based on the Differential Isfet Elements for Monitoring of Toxic Substances of Natural and Artificial Origin

Abstract: Äîñë³äaeåíî òåõíîëîã³÷í³ ðåaeèìè îòðèìàííÿ ÿê³ñíèõ ïë³âîê CdO ³ ZnO ìåòîäîì ï³ðîë³çó àöåòàò³â êàäì³þ ³ öèíêó. Óñòàíîâëåíî, ùî åëåêòðîïðîâ³äí³ñòü îòðèìàíèõ ïë³âîê çàëåaeèòü â³ä ðåaeèì³â îñàäaeåííÿ, òåðìîîáðîáêè òà â³ä òèïó ââåäåíèõ ó ðîç÷èí äîì³øîê ³ ñïåö³àëüíèõ äîáàâîê. Ïîêàçàíî, ùî îòðèìàí³ ïë³âêè âîëîä³þòü íèçüêèì ïèòîìèì îïîðîì ³ âèñîêèìè îïòè÷íèìè âëàñòèâîñòÿìè, ùî äîçâîëÿº âèêîðèñòîâóâàòè ¿õ â ÿêîñò³ ïðîçîðèõ åëåêòðîä³â ôîòîïåðåòâîðþâà÷³â ó âèäèì³é îáëàñò³ ñïåêòðà åëåêòðîìàãí³òíîãî âèïðîì³íþâàííÿ. The aut… Show more

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Cited by 4 publications
(4 citation statements)
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“…The ionselective properties of the transistor are determined by the dielectric layer of the gate, which consists of a thermally oxidized SiO 2 film with a thickness of 50 nm and a Si 3 N 4 film with a thickness of 70 nm, obtained in a low-pressure reactor. [19] The measurements were carried out using a portable device that works according to the scheme of measuring direct current in the transistor channel with an active load (Figure 3b). The sensitivity of the device was about 25 μA/pH, which corresponded to a conditional pH-sensitivity of about 80 mV/pH.…”
Section: R E V I E W T H E C H E M I C a L R E C O R Dmentioning
confidence: 99%
See 1 more Smart Citation
“…The ionselective properties of the transistor are determined by the dielectric layer of the gate, which consists of a thermally oxidized SiO 2 film with a thickness of 50 nm and a Si 3 N 4 film with a thickness of 70 nm, obtained in a low-pressure reactor. [19] The measurements were carried out using a portable device that works according to the scheme of measuring direct current in the transistor channel with an active load (Figure 3b). The sensitivity of the device was about 25 μA/pH, which corresponded to a conditional pH-sensitivity of about 80 mV/pH.…”
Section: R E V I E W T H E C H E M I C a L R E C O R Dmentioning
confidence: 99%
“…The sensor included two identical transistors separated by a protective n + region of 50 μm wide with a contact to the substrate, p + diffusion busses led to the edge of the crystal with contacts to the drain‐source, an additional output to the built‐in microelectrode of comparison, as well as two control traditional metal/dielectrics/semiconductor transistors with a metal gate designed to test the electrical parameters of manufactured crystals. The ion‐selective properties of the transistor are determined by the dielectric layer of the gate, which consists of a thermally oxidized SiO 2 film with a thickness of 50 nm and a Si 3 N 4 film with a thickness of 70 nm, obtained in a low‐pressure reactor [19] . The measurements were carried out using a portable device that works according to the scheme of measuring direct current in the transistor channel with an active load (Figure 3b).…”
Section: Biosensor Description and Designmentioning
confidence: 99%
“…Зокрема, за допомогою масивів мініатюрних рН-чутливих польових транзисторів (рН-ПТ) з іммобілізованими на їх поверхнях шарами ферментів були створені високоселективні сенсорні системи біомолекулярного розпізнавання важливих біохімічних речовин у досліджуваних розчинах шляхом прямого ферментного аналізу [1][2][3][4][5]. Подібні мультибіосенсорні системи, що діють за принципом непрямого (інгібіторного) ферментного аналізу, розроблено для задач екологічного моніторингу токсичних речовин у водних розчинах різного походження [6][7][8][9][10][11][12].…”
Section: вступunclassified
“…Лашкарьова. Розро-блена топологія передбачала розміщення двох ідентичних р-канальних транзисторів на одно-му кристалі загальною площею 8х8 мм [17]. Для усунення можливості утворення паразит-ного каналу провідності між обома транзис-торами кристал містив захисну роздільну n + -область шириною 50 мкм.…”
Section: сенсорні елементи на основі рн-чутливих польових транзисторівunclassified