Sensor behavior of MoS₂ field-effect transistor with light injection toward chemical recognition

Abstract

The application of field-effect transistor (FET) devices with atomically thin channels as sensors has attracted significant attention. We further explore the method to attach the chemical recognition capability by combining with light injection.

Solution-Based Synthesis of Oxide-Free MoS2 Film: Exploring Interface Mechanisms

“…8 These properties have made MoS 2 a promising candidate to replace and outperform existing material technologies in FET channels and electronic device applications. [9][10][11] However, maintaining these superior properties faces challenges such as unstable interfaces and the presence of native oxides, 12 leading to performance degradation 13 and defects. 14 Therefore, understanding interface mechanisms and selecting suitable dielectric surfaces is crucial to overcoming these challenges.…”

Electrical monitoring of organic crystal phase transition using MoS2 field effect transistor

“…Either n- or p-type doping and even quasi-metallic states can be achieved. 10–34 Among organic molecules, quinoidal zwitterions (QZ) are particularly interesting because they can act as efficient dopants and their epitaxial growth on van der Waals materials in the sub-monolayer regime has been reported. 35,36 In addition, QZs are simple chemical building blocks that can be very widely modified by molecular engineering to tune optical properties, size, supramolecular interactions, electrostatic or magnetic properties in their coordination complexes.…”

Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region

“…[9][10][11] Furthermore, it has a high mobility of 190-400 cm 2 V −1 s −1 in the nano-thick region, 12,13) and is thus expected to be applied to nanosheet field effect transistors (FETs), sensors and optoelectronic devices. 8,[14][15][16][17] These features present significant advantages when compared with graphene.…”