Separate Absorption and Multiplication AlGaN Solar-Blind Avalanche Photodiodes With High-low-Doped and Heterostructured Charge Layer

Zhang, Zhenhua; Sun, L. Z.; Chen, Meng; Qiu, Xinjia; Bin, Li; Jiang, Hao

doi:10.1007/s11664-020-07950-0

Cited by 5 publications

(4 citation statements)

References 21 publications

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“…Therefore, by adding a charge layer to separate the absorption and multiplication layers is an effective way to enhance the gain and reduce noise. Figure 10A shows the schematic of a backside illuminated SAM APD structure (McClintock et al, 2009;Zheng et al, 2012;Wang et al, 2014;Shao et al, 2017;Ji et al, 2018;Zhang et al, 2020), and the corresponding electric field distribution along the depletion region. By inserting a Si-doped charge layer to separate the absorption and multiplication layers, the electric field in the absorption layer remains low that avalanche multiplication cannot be triggered in the absorption layer, while the electric field in the multiplication layer remains high where the avalanche can occur.…”

Section: A Survey Of Gan-based Avalanche Photodiode Structuresmentioning

confidence: 99%

On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications

Chowdhury

2022

Front. Mater.

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We present a review of GaN avalanche photodiodes. GaN-based avalanche photodiodes are of emerging interest to the device community. The review covers various important aspects of the device such as the design space, substrate choice, edge termination efficacy, and last, but not least, the physics behind the avalanche breakdown in GaN. The study comprehends the reported impact ionization coefficients and how they may affect the device performances. Finally various reported GaN APDs are summarized and compared. We conclude that hole-initiated GaN APDs on free-standing GaN substrates can offer unprecedented advantages as ultraviolet light detectors, due to their ultra-high responsivity and low dark current.

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Section: A Survey Of Gan-based Avalanche Photodiode Structuresmentioning

confidence: 99%

On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications

Chowdhury

2022

Front. Mater.

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“… – 8 This makes AlGaN and their based heterostructures very promising for the realization of a number of electronic and optoelectronic devices, such as high electron mobility transistors (HEMT), 9 – 11 metal–oxide semiconductor (MOS) HEMT, 12 MOS heterostructures field-effect transistor, 13 , 14 ultra-violate (UV) light-emitting diodes (LEDs), 15 – 18 and solar-blind UV photodetectors 19 – 21 …”

Section: Introductionmentioning

confidence: 99%

“…[5][6][7][8] This makes AlGaN and their based heterostructures very promising for the realization of a number of electronic and optoelectronic devices, such as high electron mobility transistors (HEMT), [9][10][11] metal-oxide semiconductor (MOS) HEMT, 12 MOS heterostructures field-effect transistor, 13,14 ultra-violate (UV) light-emitting diodes (LEDs), [15][16][17][18] and solar-blind UV photodetectors. [19][20][21] Yet, the performance of AlGaN-based devices has been limited by some challenging issues connected to the AlGaN layer quality, 4,8,22 e.g., the relatively low internal quantum efficiency, the poor p-type doping efficiency, and hardly achievable n-and p-type good ohmic contacts. 8,23 The primary factor responsible for the issues mentioned above is the presence of high dislocation and point-defect densities in the AlGaN epilayer due to heteroepitaxy on foreign substrates.…”

Section: Introductionmentioning

confidence: 99%

Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

et al. 2022

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The size and density of nanopits, generated at the surface of their top layer, strongly affect the electrical and optical properties of AlGaN-based structures. Therefore, the control of the layer quality evolution as a function of the nanopits size/density is a crucial issue to enhance the device performance. In this paper, the effects of the nanopits diameter observed at the surface of AlGaN on carrier dynamics are systematically investigated. The variation of nanopits diameter is achieved through thermal annealing of a set of AlGaN/GaN heterostructures at different temperatures. The samples are characterized using the scanning electron microscope (SEM), energy-dispersive x-ray, high-resolution x-ray diffraction, photoluminescence (PL), and timeresolved PL spectroscopies. SEM images have revealed an increase in the nanopits diameter with increasing annealing temperature. In addition, we observed a linear development in the yellow luminescence intensity, accompanied by a deterioration in the PL decay times due to an increase in the density of point-defect complexes that act as nonradiative recombination centers. We also performed temperature-dependent PL measurements to study the impact of the nanopits diameter on electron-phonon scattering processes. Both electron-acoustic-and electron-longitudinal optical phonon interactions enhance with increasing nanopits diameter.

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“…Deep-ultraviolet photodetectors (DUV-PDs) are extensively used in military and civil fields for missile guidance, optical imaging, optical space communication, optical imagery, optical spatial communication and navigational positioning, among other things [1][2][3][4][5][6][7][8][9][10]. In particular, solar-blind PDs are fabricated on wide-bandgap materials such as ZnMgO [11][12][13], AlGaN [14][15][16], BeZnO [17,18], Zn 2 GeO 4 [19,20], ZnGa 2 O 4 [21][22][23], LaAlO 3 [24,25], In 2 Ge 2 O 7 [26], BN [27,28] and diamond [29,30]. However, these materials require an alloying process to achieve the desired wide bandgap for solar-blind PD applications.…”

Section: Introductionmentioning

confidence: 99%

Investigating the role of oxygen and related defects in the self-biased and moderate-biased performance of β-Ga₂O₃ solar-blind photodetectors

Arora¹,

Kumar²,

Vashishtha³

et al. 2021

J. Phys. D: Appl. Phys.

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High-performance, low-cost, self-powered deep-ultraviolet photodetectors (DUV-PDs) are essential for military and civil applications. β-Ga2O3 stands alone among all the solar-blind materials in its suitability for use in next-generation DUV-PDs. However, deep traps by oxygen vacancies critically affect the photogenerated carriers, and hence the photodetector’s final efficiency. Notwithstanding, both a lack of and an excess of oxygen in β-Ga2O3 ultimately lead to leakage channels, carrier scattering and sub-bandgap absorption. However, no studies on the impact of extremes of oxygen (oxygen-poor and oxygen-rich) on β-Ga2O3 photodetector efficiency are available in the literature. Therefore, in the present work, we aim to understand the impact of varied oxygen flow rates from 0% to 4% on material properties and photodetector performance. Photoluminescence, time-resolved photoluminescence (TRPL), x-ray photoelectron spectroscopy and the electrical properties of fabricated photodetectors confirmed the critical role of oxygen in β-Ga2O3. TRPL measurements revealed that β-Ga2O3 with 1% oxygen flow had a reported shortest decay time of nearly 50 ps. A very low dark current of 0.9 pA and a maximum photo-to-dark current of >103 were achieved at zero bias for β-Ga2O3 under optimum oxygen flow. The responsivity, external quantum efficiency, detectivity and dark current for a sample at moderate bias fabricated under optimum oxygen flow were found to be 190.08 A W−1, 9.42 × 104%, 1.22 × 1015 Jones and 21 nA, respectively. Hence, the measurements showed that for better device performance and self-powered response, oxygen concentrations that are neither too low nor too high are needed, and the detailed mechanism behind this is discussed. Comparison of the figures of merit with those of other reported devices in both self-powered and high bias mode reveals the far superior performance of the present device.

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Separate Absorption and Multiplication AlGaN Solar-Blind Avalanche Photodiodes With High-low-Doped and Heterostructured Charge Layer

Cited by 5 publications

References 21 publications

On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications

On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications

Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

Investigating the role of oxygen and related defects in the self-biased and moderate-biased performance of β-Ga₂O₃ solar-blind photodetectors

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Separate Absorption and Multiplication AlGaN Solar-Blind Avalanche Photodiodes With High-low-Doped and Heterostructured Charge Layer

Cited by 5 publications

References 21 publications

On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications

On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications

Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

Investigating the role of oxygen and related defects in the self-biased and moderate-biased performance of β-Ga2O3 solar-blind photodetectors

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Investigating the role of oxygen and related defects in the self-biased and moderate-biased performance of β-Ga₂O₃ solar-blind photodetectors