Separation mechanism of TiSi2 crystals from a Ti-Si eutectic alloy via directional solidification

Large-Scale Fabrication of SiC-TiC@C Powders via Modified Molten Salt Shielding Synthesis Technique and Their Effect on the Properties of Al2O3-MgO Castables

“…Secondly, the formation of TiC via reacting of Ti and graphite is also facilitated by salt melts. Considering that Si disappears, TiSix is detected, which due to Si reacts with Ti to form the Ti-Si eutectic phase [21,34,35]. On raising the temperature to 1300 • C, TiSix can react with graphite to generate TiC and SiC via the template growth mechanism [21,22,25,26,28,29].…”

An approach to prepare high-purity TiSi2 for clean utilization of Ti-bearing blast furnace slag

“…The pull-down rates (the rates of directional movement) significantly influence the agglomeration of TiSi 2 crystals. Zhu et al 38 showed that a low pull-down rate (5 μm s −1 ) was more conducive to the agglomeration of TiSi 2 crystals because it provided sufficient time for the migration and growth of TiSi 2 crystals; therefore, in this study, a lower pull-down rate (2.5 μm s −1 ) was chosen to obtain dense bulk agglomerated TiSi 2 crystals.…”

Axiotaxy and epitaxial textures in C54-TiSi2 films on Si(0 0 1) and Si(1 1 1) substrates

“…Preprint submitted to Journal of L A T E X Templates August 23, 2018 [15] Si(100) (101)//(111) (313)//(011) [17] (130)//(111) (004)//(110) [17,18] (101)//(111) (121)//(110) [17] applications. In recent years, Ti-based contacts have regained considerable attention for implementation in FinFET-technology through the formation of a thin Ti-Si compound, where Ti-based contacts offer a significant advantage over Ni because of the lower mobility of Ti in Si [3,4,5,6,7,8].…”

“…the automotive industry or high temperature applications. In recent years, Ti-based contacts have regained considerable attention for implementation in FinFETtechnology through the formation of a thin Ti-Si compound, where Ti-based contacts offer a significant advantage over Ni because of the lower mobility of Ti in Si [3][4][5][6][7][8].…”

“…However, the transformation of C54-TiSi 2 from a C49-TiSi 2 phase is nucleation-driven and as a result the C54-nucleated film often heavily granulated. More recent research on C54-TiSi 2 focuses on the epitaxial alignment between the nucleated alignment of the C54-nucleated film and the underlying Si substrate in order to improve the morphology of such C54 films [6][7][8]18]. Since then the improvement of the used experimental techniques have led to the discovery of other types of texture, such as axiotaxy [22] and also a particular plane rotation across crystalline grains of Ni-Si compounds termed trans-rotational domains [23], rendering novel insights on how the texture of the silicide film affects its stability.…”