2015
DOI: 10.1109/tcsii.2014.2362713
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Set-Triggered-Parallel-Reset Memristor Logic for High-Density Heterogeneous-Integration Friendly Normally Off Applications

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Cited by 5 publications
(2 citation statements)
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“…However, most of those reported methods are carried out on the basis of employing extra circuit devices which might lead to higher power losses as well as degradation of circuit integration density. Different from other fundamental circuit elements, real MR can be fabricated in nanoscale and hence instrumental in achieving very high circuit integration density 56,57 . Hence, it can be expected that introducing MR to replace conventional circuit devices in DC/DC power converters could reduce the overall system volume and power losses.…”
Section: Introductionmentioning
confidence: 99%
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“…However, most of those reported methods are carried out on the basis of employing extra circuit devices which might lead to higher power losses as well as degradation of circuit integration density. Different from other fundamental circuit elements, real MR can be fabricated in nanoscale and hence instrumental in achieving very high circuit integration density 56,57 . Hence, it can be expected that introducing MR to replace conventional circuit devices in DC/DC power converters could reduce the overall system volume and power losses.…”
Section: Introductionmentioning
confidence: 99%
“…Different from other fundamental circuit elements, real MR can be fabricated in nanoscale and hence instrumental in achieving very high circuit integration density. 56,57 Hence, it can be expected that introducing MR to replace conventional circuit devices in DC/DC power converters could reduce the overall system volume and power losses.…”
mentioning
confidence: 99%