Setup for irradiation and characterization of materials and Si particle detectors at cryogenic temperatures

Väyrynen, S.; Pusa, P.; Sane, Petri; Tikkanen, P.; Räisänen, J.; Kuitunen, Katja; Tuomisto, Filip; Härkönen, J.; Kassamakov, I.; Tuominen, E.; Tuovinen, E.

doi:10.1016/j.nima.2006.11.065

Cited by 19 publications

(10 citation statements)

References 12 publications

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“…The range of the fluences used for the irradiations is sufficient to produce point defects, however not high enough for extended damage to be created in the lattice. This is confirmed by the channeling results showing unaltered crystallinity and is in line with earlier studies of irradiated Si and Ge using similar fluences [25,26]. The point defects produced in these conditions are primarily vacancies and interstitials on both sublattices.…”

Section: Discussionsupporting

confidence: 91%

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Instability of the Sb vacancy in GaSb

et al. 2017

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We demonstrate that the instability of the Sb vacancy in GaSb leads to a further increase in the acceptor-type defect concentration in proton irradiated undoped, p-type GaSb. Using positron annihilation spectroscopy in situ with 10 MeV proton irradiation at 35 K, we find that the irradiation produces both native vacancy defects in GaSb. However, the Sb vacancy is unstable above temperatures of 150 K and undergoes a transition resulting in a Ga vacancy and a Ga antisite. The activation energy of this transition is determined to be 0.6 eV ± 0.1 eV. Our results are in line with the established amphoteric defect model and prove that the instability of the Sb vacancy in GaSb has a profound role on the native defect concentration in GaSb.

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Section: Discussionsupporting

confidence: 91%

“…This depth is sufficient to avoid end of range effects, as the mean implantation depth of positrons is 33 μm in GaSb. This experimental procedure has been shown to be efficient in producing monovacancy defects, without evidence of larger clusters, in Si and Ge [25,26].…”

Section: Methodsmentioning

confidence: 98%

Instability of the Sb vacancy in GaSb

et al. 2017

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“…For a more detailed description of the unique experimental setup see Ref. 34. To get a homogenous defect distribution within the positron implantation profile, the top sample was ground mechanically to a thickness of approximately 250 μm.…”

Section: Methodsmentioning

confidence: 99%

Direct observations of the vacancy and its annealing in germanium

et al. 2011

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“…The CID detector structures were also made of MCz-Si. The bias of the CID detectors during the measurement was 500 V. At fluencies /cm , the depletion voltage would be more than 1000 V at temperatures from 0 to C [15], [18]. As shown in Fig.…”

Section: Characterizing Cid By C-tctmentioning

confidence: 99%