SEU sensitivity of bulk and SOI technologies to 14-MeV neutrons

Self Cite

In this paper we explore the sensitivity of commercial static random-access memory devices to 14 MeV neutrons. The effects on bulk technologies are investigated as a function of supply voltage and angle of incidence. Monte Carlo simulations of nuclear interactions with device architecture are used for comparison with experimental data. This simulation analysis allows us to determine the key parameters of the device sensitivity as a function of the technology integration.

Section: B Angle Of Incidencementioning

confidence: 99%

Section: Simulationmentioning

confidence: 99%

14 MeV neutron-induced SEU in SRAM devices

Flament

Baggio

D'hose

et al. 2004

Self Cite

“…The strongest angular dependence is observed at 14 MeV for both bulk and SOI devices [11], [15]. We plotted in Fig.…”

Section: Angular Dependence Of Seu Cross Sectionmentioning

confidence: 92%

“…Previous studies have pointed out the strong effect of the angle of incidence for low energy particles [11], [15], [16]. This behavior is attributed to the presence of other materials (SiO , metal layers) above the sensitive region leading to different recoil LET distribution between front side and back side irradiations.…”

Section: Analysis Of the Sensitivity Of Bulk And Fd-soi Technologmentioning

confidence: 99%

Neutron and proton-induced single event upsets in advanced commercial fully depleted SOI SRAMs

Baggio¹,

Ferlet-Cavrois²,

Lambert³

et al. 2005

Self Cite

The SEU sensitivity of 0.2 m fully depleted silicon on ensulator (FD-SOI) devices to proton and neutron irradiations is investigated in a large energy range (14-500 MeV). The comparison to bulk devices with similar gate lengths shows an improvement of a factor of 50 with the presence of body ties. Monte Carlo simulations were performed to confirm that the low sensitivity of FD-SOI is mainly due to the reduced sensitive volume. These results were extrapolated to deca-nanometric technologies to predict the behavior of advanced SOI processes. We found that fully depleted devices will be far less sensitive than partially depleted technologies to the terrestrial radiative environment.

“…For this reason, physical designers are continuously searching for new methods to improve manufacturing technologies to reduce SEE consequences. For instance, Silicon-On-Insulator (SOI) technology has been proved to be less sensitive than CMOS bulk technology [5].…”

Section: Introductionmentioning

confidence: 99%

Evaluating the SEE Sensitivity of a 45 nm SOI Multi-Core Processor Due to 14 MeV Neutrons

Ramos

Vargas

Baylac

et al. 2016

Abstract-The aim of this work is to evaluate the SEE sensitivity of a multi-core processor having implemented ECC and parity in their cache memories. Two different application scenarios are studied. The first one configures the multi-core in Asymmetric Multi-Processing mode running a memory-bound application, whereas the second one uses the Symmetric Multi-Processsing mode running a CPU-bound application. The experiments were validated through radiation ground testing performed with 14 MeV neutrons on the Freescale P2041 multi-core manufactured in 45nm SOI technology. A deep analysis of the observed errors in cache memories was carried-out in order to reveal vulnerabilities in the cache protection mechanisms. Critical zones like tag addresses were affected during the experiments. In addition, the results show that the sensitivity strongly depends on the application and the multi-processsing mode used.