SEU, SET, and SEFI Test Results of a Hardened 16Mbit MRAM Device

Hafer, C.; Thun, Matt Von; Mundie, Michelle; Bass, Derek; Sievert, Fred

doi:10.1109/redw.2012.6353717

Cited by 11 publications

(12 citation statements)

References 1 publication

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“…This differentiates our study from the previous ones [6]- [8] (see again Table I) as well as [4], in which an MRAM chip was fed from a power supply during irradiation, but the voltage bias applied to MTJ elements is expected to be zero, in principle, because the chip operated in the data retention mode. Note that the bias voltages applied during irradiation in this study are enough small to keep the programmed magnetization.…”

Section: B Irradiationmentioning

confidence: 84%

“…draw attention of this radiation community because of their possible high radiation tolerance [1]- [4]. Their key structure is a two-terminal resistive device that is called "magnetic tunnel junction (MTJ)".…”

Section: Introductionmentioning

confidence: 99%

“…Heavy ion effects are reported in [6], which has studied an AlO x -based MTJ associated with the external magnetic-field switching. All of these previous stack-level studies, in addition to system-level or MRAM-chip researches that include a consumer product test [4], have investigated in-plane MTJs, not perpendicular one. p-MTJ exhibits a cylinder shape with a diameter of 70 nm.…”

Section: Introductionmentioning

confidence: 99%

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Influence of heavy ion irradiation on perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions

Kobayashi¹,

Kakehashi²,

Hirose³

et al. 2013

2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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A non-volatile memory element that is called a perpendicular-anisotropy magnetic tunnel junction has been fabricated in a CoFeB/MgO/CoFeB film stack technology. It exhibits two stable resistance values, high or low, depending on the relative direction of magnetization of the two ferromagnetic CoFeB layers. After programmed into the high resistance state with a current injection scheme based on the spin transfer torque theory, the tunnel junction has been exposed to 15-MeV Si ions in different voltage stress conditions. It has been observed that the tested structure remains in the programmed high resistance state after received the bombardments of several tens of Si ions and more, even under the stressed situations. A time-domain analysis has proven that this result is due to the perfect immunity of the tested magnetic tunnel junction to single event upsets. A resistance degradation due to the heavy-ion irradiation has been detected through a precise parameter analysis based on a tunneling theory but negligibly small, 1%.

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Section: B Irradiationmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of heavy ion irradiation on perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions

Kobayashi¹,

Kakehashi²,

Hirose³

et al. 2013

2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

View full text Add to dashboard Cite

show abstract

“…E LECTRON devices with magnetic properties, such as magnetic random access memories (MRAMs), have drawn the attention of radiation researchers because of their potential high radiation tolerance [1]- [4]. Their key structure is a two-terminal resistive device called a magnetic tunnel junction (MTJ) that is composed of a stack of layers that include a tunnel insulator film sandwiched by two ferromagnetic layers.…”

Section: Influence Of Heavy Ion Irradiation On I Introductionmentioning

confidence: 99%

“…In particular, heavy ion effects were reported in a study on an -based MTJ with external magnetic-field switching [6]. Note that all of the previous stack-level studies, as well as system-level or MRAM-chip research including a consumer product test [4], have dealt with in-plane MTJs, not perpendicular ones. samples were fabricated on a -cm thermally oxidized Si substrate.…”

Section: Influence Of Heavy Ion Irradiation On I Introductionmentioning

confidence: 99%

Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions

Kobayashi

Kakehashi

Hirose

et al. 2014

IEEE Trans. Nucl. Sci.

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A non-volatile memory element called a perpendicular-anisotropy magnetic tunnel junction was fabricated using CoFeB/MgO/CoFeB film stack technology. It exhibits two stable resistance values, high or low, depending on the relative directions of the magnetizations of the two ferromagnetic CoFeB layers. After being programmed into the high resistance state with a current injection scheme based on the spin transfer torque theory, the tunnel junction was exposed to 15-MeV Si ions under different voltage stress conditions. The tested structure remained in the programmed high resistance state after being bombarded with 10-100 Si ions, even under the stressed situations. A time-domain analysis proved that this result is due to the perfect immunity of the tested magnetic tunnel junction to single event upsets. Some degradation in resistance due to the heavy-ion irradiation was detected through a precise parameter analysis based on a tunneling theory but it was negligibly small (1%). There were no statistically significant changes in the thermal stability factor before and after irradiation, and this means the long-term retention properties remained unchanged.

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Total ionizing dose and synergistic effects of magnetoresistive random-access memory

Zhang

Guo

et al. 2018

NUCL SCI TECH

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SEU, SET, and SEFI Test Results of a Hardened 16Mbit MRAM Device

Cited by 11 publications

References 1 publication

Influence of heavy ion irradiation on perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions

Influence of heavy ion irradiation on perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions

Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions

Total ionizing dose and synergistic effects of magnetoresistive random-access memory

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