Proceedings of the Great Lakes Symposium on VLSI 2022 2022
DOI: 10.1145/3526241.3530355
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Sextuple Cross-Coupled-DICE Based Double-Node-Upset Recoverable and Low-Delay Flip-Flop for Aerospace Applications

Abstract: This paper proposes a novel sextuple cross-coupled dualinterlocked-storage-cell (DICE) based double-node-upset (DNU) recoverable and low-delay flip-flop (FF), namely SCDRL-FF, for aerospace applications. The SCDRL-FF mainly consists of sextuple cross-coupled DICEs controlled by clock-gating. The use of clockgating based DICEs significantly reduces the CLK-Q transmission delay of the SCDRL-FF. Through the redundant and interlocked clock-gating based DICEs, the SCDRL-FF can provide complete DNU recoverability. S… Show more

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Cited by 1 publication
(2 citation statements)
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“…Also with the increase in the number of transistors (eighteen transistor), the total area also increases and also results in high power consumption. Aibin Yan et al, designed two sextuple cross-coupled SRAM radiation tolerant design [59] that contains six charge storage nodes and consists of eighteen transistors out of which six are pull-up PMOS transistors, six are pull-down NMOS transistors and the remaining six are NMOS access transistors connected across the storage nodes. The SCCS-18T design provides complete recovery from the radiation effect that can strike at a single node but provides partial DNU recovery.…”
Section: Hrhs and Hrhs Ev Design (Year: June 2023)mentioning
confidence: 99%
See 1 more Smart Citation
“…Also with the increase in the number of transistors (eighteen transistor), the total area also increases and also results in high power consumption. Aibin Yan et al, designed two sextuple cross-coupled SRAM radiation tolerant design [59] that contains six charge storage nodes and consists of eighteen transistors out of which six are pull-up PMOS transistors, six are pull-down NMOS transistors and the remaining six are NMOS access transistors connected across the storage nodes. The SCCS-18T design provides complete recovery from the radiation effect that can strike at a single node but provides partial DNU recovery.…”
Section: Hrhs and Hrhs Ev Design (Year: June 2023)mentioning
confidence: 99%
“…(v) HRHS18T EV[56]. (vi) SCCS -18T[59]. (vii) SCCS-18T EV[59].6.4.2 | LPDNUR & HSDNUR design (Year: March 2023) Shuo Cai et al, 2023 in [53] designed two radiation resistant SRAM cells named as LPDNUR and HSD-NUR that consists of four storage nodes and uses a two-input C-element structure that helps not only to…”
mentioning
confidence: 99%