Shallow <i>p</i>+ layer in In0.53Ga0.47As using P/Be and As/Be co-implant

Wang, Kou‐Wei; Long, J.; Mitcham, D.

doi:10.1063/1.340166

Cited by 12 publications

(2 citation statements)

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“…Co-implantation, as this scheme has come to be known, has been used effectively to substantially increase the activation of carbon in InGaAs, AlGaAs and GaAs (36,37). For Group II acceptor studies, implanted Be/P and Be/As co-implants have also demonstrated increased p-type activation in InGaAs with the added side effect of causing limited Be diffusion in the implanted layer (38). Similar trends have been shown with Mg/P in GaAs and Be/P in InP and Be/P in InGaAs (39)(40)(41).…”

Section: Co-implantationmentioning

confidence: 99%

(Invited) A Brief Review of Doping Issues in III-V Semiconductors

et al. 2013

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A brief review of n-type doping of GaAs, InGaAs and InP using ion implantation is presented. While the diffusion of the amphoteric dopant Si is not a significant issue its activation is limited to around 1×1019/cm3. This has prompted many studies into factors that might affect dopant activation including co-implantation to force site selection, damage and amorphization effects, elevated temperature implants and capping effects. A summary of these results is discussed. With interest in using III-V materials for n-channel devices in future sub 15 nm devices there is also an increasing interest in low energy implants. This suggests the role of surface degradation upon annealing will become even more important. Recent results along these lines are presented.

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Section: Co-implantationmentioning

confidence: 99%

(Invited) A Brief Review of Doping Issues in III-V Semiconductors

et al. 2013

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“…1-4 In order to obtain a shallow p ϩ layer in compound semiconductors, Be has been coimplanted with As or P. 5,6 As/Be or P/Be coimplantation in InP has been studied for device applications. 3,7,8 The activation was done with capless annealing or capped annealing.…”

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confidence: 99%

Effect of capping layers on activation of Be/As-implanted semi-insulating InP:Fe

Lee

Jeong

1997

Applied Physics Letters

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Be/As-coimplanted semi-insulating InP:Fe samples have been activated by rapid thermal annealing using two different capping layers to protect the surface during activation. Activated samples are investigated using Hall measurements, transmission electron microscopy, and secondary ion mass spectrometry. It is found that borosilicate glass capping results in more abrupt Be profiles as compared with aluminum oxide. Aluminum oxide capped samples show better electrical properties. However, an electrically dead layer and dislocation loop at the surface are observed in aluminum oxide capped samples. These results can be related to stress in the capped films during the activation process.

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