Shallow junction formation by dual Ge/B, Sn/B and Pb/B implants

Hašlar, V.; Seidl, P.; Hazdra, P.; Gwilliam, R.; Sealy, B.J.

doi:10.1016/0168-583x(91)96232-a

Cited by 7 publications

(1 citation statement)

References 14 publications

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“…Various applications of Ge + implantation in Si have been demonstrated recently. Implantation of Ge + ions into Si has been used (i) for formation of high-quality Si-Ge/Si heterostructures [1], (ii) for pre-amorphization of implanted layers to reduce channelling effects or to improve crystal structure after annealing [2,3] and (iii) for compensation of mechanical misfit strain to decrease defect concentrations and to reduce enhanced impurity diffusion [4]. Good control of secondary defects induced by Ge + implantation and defect-impurity interactions is becoming an increasingly important requirement in the utilization of Ge co-implantation in Si technology.…”

Section: Introductionmentioning

confidence: 99%

Mechanical strain and electrically active defects in Si implanted with Ge⁺ions

Suprun-Belevich

Palmetshofer

Sealy

et al. 1999

Semicond. Sci. Technol.

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Internal mechanical strain and defects in Si crystals implanted with Ge + ions over the dose range 10 10 -3 × 10 15 cm −2 have been studied. The strain after the annealing cycles was investigated by high-resolution x-ray diffraction; the defects with deep levels in the bandgap were investigated by deep level transient spectroscopy. In the as-implanted samples and at low annealing temperatures vacancy-related defect complexes with deep levels in the gap are associated with the mechanical strain induced by isolated amorphous inclusions. In the temperature range 500-900 • C the dominant defects are Ge-containing complexes. At high annealing temperatures (700-900 • C) deep level traps associated with the boundaries between the recrystallized regions and the rest of the crystal are formed and a corresponding strain profile is created.

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Section: Introductionmentioning

confidence: 99%