2019
DOI: 10.1021/acsnano.9b03648
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Shape-Engineered Synthesis of Atomically Thin 1T-SnS2 Catalyzed by Potassium Halides

Abstract: Shape engineering plays a crucial role in the application of two-dimensional (2D) layered metal dichalcogenide (LMD) crystalline materials in terms of physical and chemical property modulation. However, controllable growth of 1T phase tin disulfide (SnS2) with multifarious morphologies has rarely been reported and remains challenging. Herein, we report a direct synthesis of large-size, uniform, and atomically thin 1T-SnS2 with multiple morphologies by adding potassium halides via a facile chemical vapor deposi… Show more

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Cited by 57 publications
(64 citation statements)
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“…Additionally, the energy‐dispersive X‐ray spectroscopy (EDS) elemental mapping in Figure 1e revealed the existence of Sn and S elements in 1H‐SnS 2 , and the ratio of Sn/S was found to be ≈1:1.95 (Figure S5, Supporting Information), suggesting a reasonable stoichiometric composition of SnS 2 . [ 41 ]…”
Section: Figurementioning
confidence: 99%
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“…Additionally, the energy‐dispersive X‐ray spectroscopy (EDS) elemental mapping in Figure 1e revealed the existence of Sn and S elements in 1H‐SnS 2 , and the ratio of Sn/S was found to be ≈1:1.95 (Figure S5, Supporting Information), suggesting a reasonable stoichiometric composition of SnS 2 . [ 41 ]…”
Section: Figurementioning
confidence: 99%
“…In addition, as shown in the survey XPS spectra and the high‐resolution XPS spectra of 1H‐SnS 2 and 1T‐SnS 2 (Figures S7 and S8, Supporting Information), the Sn 3d 5/2 (at 486.67 eV) and 3d 3/2 (at 495.09 eV) peaks are in line with Sn 4+ , and S 2p 3/2 (at 161.74 eV) and 2p 1/2 (at 162.94 eV) peaks are assigned to S 2− , also suggesting that the 1T‐SnS 2 was synthesized with high purity. [ 41 ] However, the Sn 3d peaks of 1H‐SnS 2 are located at 486.06 eV (3d 5/2 ) and 494.48 eV (3d 3/2 ), and the S 2p peaks of 1H‐SnS 2 are located at 161.17 eV (2p 3/2 ) and 162.37 eV (2p 1/2 ), respectively. Compared with 1T‐SnS 2 , all the peak positions of Sn 3d and the S 2p regions in 1H‐SnS 2 were lower binding energy shifted.…”
Section: Figurementioning
confidence: 99%
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“…As a representative post‐transition metal dichalcogenide semiconductor material, tin disulfide (SnS 2 ), which has a stable T‐phase, is an abundant earth material with an appropriate Gibbs free energy that adsorbs hydrogen atoms . In addition to being nontoxic, low‐cost, and chemically stable in acidic or neutral aqueous solutions, SnS 2 provides a favorable catalytic activity and relatively high surface electronegativity.…”
Section: Introductionmentioning
confidence: 99%
“…[ 124 ] Recently, various shapes (hexagonal, triangular, windmill, dendritic, and coralloid) of SnS 2 nanosheets were prepared by controlling the growth conditions and substrate surfaces. [ 125 ] Importantly, selective phase growth of 2H or 1T was observed with the help of different salts. Herein, sodium halides favored the growth of the 2H phase, and potassium halides helped the growth of the 1T phase.…”
Section: Group Iv–vimentioning
confidence: 99%