1996
DOI: 10.1088/0963-0252/5/1/007
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Sheath dynamics in plasma immersion ion implantation

Abstract: Time-resolved Langmuir probe measurements of the sheath dynamics and ion flux measurements in static and dynamic modes have been made. In the case of supersonic moving sheaths the experimental data qualitatively shows that the presheath is suppressed. The results of the sheath measurements are compared to a modified model description for the non-stationary sheath during plasma immersion implantation, which includes the suppression of the presheath at supersonic velocity of the plasma boundary.Analytical formul… Show more

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Cited by 41 publications
(19 citation statements)
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“…The sheath dynamics, which has already been extensively studied for different geometries, planar, cylindrical, or spherical, in the case of non-collisional sheaths [4,7,11,[39][40][41] and collisional sheaths [42], is now well understood.…”
Section: B Plasma Sheath Dynamicsmentioning
confidence: 99%
“…The sheath dynamics, which has already been extensively studied for different geometries, planar, cylindrical, or spherical, in the case of non-collisional sheaths [4,7,11,[39][40][41] and collisional sheaths [42], is now well understood.…”
Section: B Plasma Sheath Dynamicsmentioning
confidence: 99%
“…where n i is the ion density, e the elementary charge, u i the ion velocity, and S the surface area of the target. Assuming that the ion flow is collisionless because the mean free path for carbon particles is roughly calculated to be 1.0 m at 10 À2 Pa gas pressure, the ion velocity u i around the boundary between the sheath and the plasma can be expressed using a Bohm criterion, 33,34)…”
Section: Resultsmentioning
confidence: 99%
“…Surface morphology influences wettability, and is therefore also investigated in this work. A suitable technology for ion implantation of polymers is plasma immersion ion implantation (PIII), which is also applied to many other materials 2,3 . This technology offers the possibility to independently change the current density during the pulsed ion implantation process as well as the average dose of the incident ions.…”
Section: Introductionmentioning
confidence: 99%