Shelf‐Stable Quantum‐Dot Light‐Emitting Diodes with High Operational Performance

Abstract

Quantum-dot light-emitting diodes (QLEDs) combine the stable, efficient, and high color-purity emission of quantum dots (QDs) and the advantages of cost-effective solution-based processing techniques, promising large-area electroluminescent devices ideal

Effects of UV Irradiation and Storage on the Performance of Inverted Red Quantum-Dot Light-Emitting Diodes

“…Currently, the underlying origin of the positive ageing effect in QLEDs is still under debate. However, all the current research results agree that the positive ageing effect is related to the defect passivation of the inorganic electron transport layer ZnO, which can be caused by the reaction of ZnO with the acid in UV-curable resin [ 16 ] or with the evaporated electrode Al [ 15 ]. Although the performance of the device is improved after storage for a few days, the storage stability declines.…”

“…Many researchers have reported on conventional QLEDs with high operation stability but low storage stability. Recently, a great deal of attention has been paid to a fascinating phenomenon—namely, positive ageing behavior in conventional QLEDs [ 14 , 15 , 16 ]. This positive ageing behavior exhibits improvements in device efficiency and electrical conductance within several days of storage.…”

Synthesis of Cu‐Modified Nickel Oxide Nanocrystals and Their Applications as Hole‐Injection layers for Quantum‐Dot Light‐Emitting Diodes

“…Quantum‐dot light‐emitting diodes (QLEDs) have drawn considerable research interest because of their narrow emission linewidths, high electroluminescence efficiencies and low‐cost solution‐based fabrication process [1–4] . State‐of‐the‐art QLEDs generally adopt a multilayer structure of anode/hole‐injection layer (HIL)/hole‐transporting layer (HTL)/QDs/electron‐transporting layer (ETL)/metal cathode [3–21] . In this structure, solution‐processed transition metal oxides, including NiO x , VO x , WO x and MoO x , have been investigated as HILs for QLEDs [11,20,22–28] .…”

“…Red QDs with structure of CdSe/CdZnSe/ZnSeS core/shell/shell and capping with tri‐n‐octylphosphine are applied as emissive layers. The bi‐layered oxide ETLs are used to suppress interfacial exciton quenching and offer efficient electron transport [21] . The devices were encapsulated by an acid‐free resin (LOCTITE 3335) and stored under air conditions.…”

Fast-response, high-stability, and high-efficiency full-color quantum dot light-emitting diodes with charge storage layer

“…As a result, this phenomenon will lead to a delay in the light emission of the QLEDs, and severely limit the application of QLEDs in the field of high-dynamic display. However, there is still no clear solution to accelerate the positive aging process in order to enhance the response speed and stability of the device [26][27][28].…”