Shifting intrinsic bistability states in a ferroelectric resonant tunneling diode

Experimental results on entirely complex oxide ferromagnetic/ferroelectric/ferromagnetic tunnel junctions are presented in which the tunneling magnetoresistance is modified by applying low electric field pulses to the junctions. The experiments indicate that ionic displacements associated with the polarization reversal in the ferroelectric barrier affect the complex band structure at ferromagnetic–ferroelectric interfaces. The results are discussed in the framework of the theoretically predicted magnetoelectric interface effect and may lead to novel multistate memory devices.

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Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures

Hambe

Petraru

Pertsev

et al. 2010

Adv Funct Materials

127

110

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Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier

2019

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Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in next‐generation memories, owing to attractive advantages such as high‐density of data storage, nondestructive readout, fast write/read access, and low energy consumption. Herein, recent progress regarding FTJ devices is reviewed with an emphasis on the modulation of the potential barrier. Electronic and ionic approaches that modulate the ferroelectric barriers themselves and/or induce extra barriers in electrodes or at ferroelectric/electrode interfaces are discussed with the enhancement of memory performance. Emerging physics, such as nanoscale ferroelectricity, resonant tunneling, and interfacial metallization, and the applications of FTJs in nonvolatile data storage, neuromorphic synapse emulation, and electromagnetic multistate memory are summarized. Finally, challenges and perspectives of FTJ devices are underlined.

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Study on the spin polarization of a current through a hybrid resonant tunneling diode

Kang

Kim

2010

phys. stat. sol. (b)

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The effects of spin-splitting energy and temperature on the electric transport properties through a hybrid resonant tunneling diode (RTD) with ferroelectric barriers and a diluted magnetic semiconductor (DMS) quantum well are studied by using the non-equilibrium Green's function method. The results show that the period of spin polarization oscillation as a function of a bias voltage increases by increasing the spin-splitting energy of the DMS quantum well. The spin polarization of the current near the Fermi level is highly influenced by a change in temperature. The RTD with a ferromagnetic quantum well is more efficient than that with a ferromagnetic emitter to manipulate the spin direction of the current and to enhance the spin polarization of the current without changing the direction of an external magnetic field.

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Shifting intrinsic bistability states in a ferroelectric resonant tunneling diode

Cited by 9 publications

References 17 publications

Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures

Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures

Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier

Study on the spin polarization of a current through a hybrid resonant tunneling diode

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