2020
DOI: 10.1016/j.microrel.2020.113765
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Shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction

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Cited by 4 publications
(2 citation statements)
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“…In the inverter, there is the possibility to introduce a shoot-through. This is a state where the IGBTs of S1 and S2 (see Figure 6) of one phase are closed simultaneously [23]. This creates a DC short circuit.…”
Section: Iso 26262mentioning
confidence: 99%
“…In the inverter, there is the possibility to introduce a shoot-through. This is a state where the IGBTs of S1 and S2 (see Figure 6) of one phase are closed simultaneously [23]. This creates a DC short circuit.…”
Section: Iso 26262mentioning
confidence: 99%
“…When the dV CE /dt is high enough, the gate voltage can surpass the threshold voltage and causes unwanted false turnon. This false triggering turn-on can cause shoot-through faults [8]. Recently, the dV CE /dt is found to be a good junction…”
Section: Introductionmentioning
confidence: 99%