2019
DOI: 10.1109/tpel.2018.2834463
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Short-Circuit Characterization and Protection of 10-kV SiC <sc>mosfet</sc>

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Cited by 77 publications
(37 citation statements)
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“…Much effort has been made in the short-circuit testing [27][28][29][30][31][32][33], [34] of SiC MOSFETs and its protection in power converter design [34][35][36][37][38]. In [27], comparative testing of two types of 1.2 kV/24 A SiC MOSFETs with Si MOSFET is given.…”
Section: B Selected Failure Mechanismsmentioning
confidence: 99%
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“…Much effort has been made in the short-circuit testing [27][28][29][30][31][32][33], [34] of SiC MOSFETs and its protection in power converter design [34][35][36][37][38]. In [27], comparative testing of two types of 1.2 kV/24 A SiC MOSFETs with Si MOSFET is given.…”
Section: B Selected Failure Mechanismsmentioning
confidence: 99%
“…With the increasing commercial applications of SiC devices it is expected that more studies on short-circuits will be needed. At the application level, fast and robust shortcircuit protection [34][35][36][37][38] is essential to utilize the promising properties of SiC power devices without compromising the device-level design.…”
Section: B Selected Failure Mechanismsmentioning
confidence: 99%
“…Moreover, there have been attempts to develop pure solid-state dc breakers based on high-voltage semiconductor switches, but the on-state conduction losses will be much higher [63] [64]. The recently emerging high-voltage Silicon Carbide MOSFETs, such 3.3 kV, 6.5 kV and 10 kV, may provide a feasible solution in the near future for developing solid-state breakers [65].…”
Section: ) Circuit Breakersmentioning
confidence: 99%
“…21 and Fig. 22 for a 5.5 kW engine specifically exchanged to an elective source whose phase angle lags behind the remaining voltage point of 180º and 240º [82][83][84][85]. It is important to say that the transient and peak values of the stator current are diversified.…”
Section: B Inrush Current Analysis Of Direct Fast Transfermentioning
confidence: 99%