Short-Wave Infrared HgCdTe Electron Avalanche Photodiodes for Gated Viewing

Sieck, A.; Benecke, M.; Eich, D.; Oelmaier, Reinhard; Wendler, J.; Figgemeier, H.

doi:10.1007/s11664-018-6425-0

Cited by 9 publications

(7 citation statements)

References 15 publications

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“…Figure 8 shows the measured gain, dark current and GNDCD of SWIR Hg0.55Cd0.45Te APD from 130K to 300K, the gainbias behavior at different temperatures is same with MWIR HgCdTe APD, while there is no sudden rise of dark current at high temperature under a large reverse bias, which is mainly due to the increase of the bandgap from MW to SW. And the gain is about 100 at -25V reverse bias at 130K GNDCD is about 1μA/cm 2 at -1V reverse bias at 190K, the dark current level is 1~2 magnitudes higher than the reported result of AIM [19], further device structure and surface passivation optimization should be done.…”

Section: High-temperature Featuresmentioning

confidence: 83%

Developments and characterization of HgCdTe e-APDs at SITP

Guo

Yang

Shen

et al. 2023

Earth and Space: From Infrared to Terahertz (ESIT 2022)

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HgCdTe has been shown to be the first semiconductor exhibiting single-carrier multiplication in short-wavelength, medium-wavelength, long-wavelength avalanche photodiodes detectors for cut-off wavelengths from 1.3 µm to 11 µm corresponding to compositions xcd from 0.7 to 0.2, which has the remarkable characteristics of high gain, high bandwidth and almost no excess noise. These results have opened a new horizon in photon starved and high-speed applications, such as active imaging and free space optical communications. In this paper, we report the latest results at SITP of HgCdTe eFAPDs using LPE-grown absorption layers in the SW and MW wavelength bands. The gain of single element short-wavelength HgCdTe APD for 2.57 μm cut-off wavelength is about 100 at 25V reverse bias, and GNDCD is about 1.47×10- 7A/cm2 at gain of 100 at 130K. For MW HgCdTe APDs, increase the P region doping concentration will reduce the overall dark current density and eliminate sudden rise of dark current at large bias and high temperature, and lower Cd composition could be a trade-off way for GNDCD suppression. 50 μm pitch 128×128 array HgCdTe APDs for cut-off wavelengths 4.88 µm corresponding to compositions xcd 0.307 were fabricated, whose GNDCD is less than 1×10-7A/cm2 at 8V reverse bias, gain is over 1000 at 11V reverse bias. A 50 μm pitch 128×128 array HgCdTe APDs with xcd=0.29 was manufactured, whose gain reaches 1570 at 9.8V reverse bias, the average excess noise factor is 1.25 at average gain of 133, noise equivalent photon is about 12 at average gain of 113. By thinning the absorption region thickness, the response bandwidth of Hg0.79Cd0.31Te APD reaches 635MHz under 1V reverse bias. Moreover, the medium-wavelength focal plane of 320×256 array is demonstrated the imaging, and the low noise, high sensitivity and fast imaging characteristics of HgCdTe APDs under linear avalanche gain are verified.

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Section: High-temperature Featuresmentioning

confidence: 83%

Developments and characterization of HgCdTe e-APDs at SITP

Guo

Yang

Shen

et al. 2023

Earth and Space: From Infrared to Terahertz (ESIT 2022)

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“…Figure 4A shows a photograph of a person wearing camouflage clothing, close to a tree at a distance of 128 m. The GV image in Figure 4B and silhouette images of various observed scenes. The performance data of the InGaAs-APD GV sensors are essentially comparable to their HgCdTe counterpart [13] but without the need for delicate II/VI materials and process technology.…”

Section: Silhouette Imagingmentioning

confidence: 92%

“…Four output channels allow for a maximum full frame rate of 100 Hz. More details on the GV-ROIC can be found elsewhere [13]. Since the integration times in GV are usually very short in the range of a few ns to several 100 ns, the dark current of the photodetectors is not the main contribution to the overall system noise.…”

Section: Swir Sensor Developmentmentioning

confidence: 99%

“…In this paper, we have reported the development of a GV system in the eye-safe SWIR spectral range with high spatial resolution, high distance resolution, and high detection range. For the detector material of the FPA, two technological paths were conducted in parallel: While one collaboration partner, AIM Infrarot-Module GmbH, developed an APD sensor in the HgCdTe material system [13] we focused in the following on the development of an InGaAs-based APD sensor fabricated at Fraunhofer IAF. The InGaAs detector arrays were hybridized with the same ROICs (except for the inverted polarity) as their counterpart HgCdTe detectors at AIM.…”

Section: Introductionmentioning

confidence: 99%

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InGaAs APD matrix sensors for SWIR gated viewing

Rutz

Aidam

Heussen

et al. 2019

Advanced Optical Technologies

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Short-wavelength infrared (SWIR) detection systems are increasingly in demand for surveillance, reconnaissance, and remote sensing applications. Eye-safe SWIR lasers can be utilized for active imaging systems with high image contrast and long detection range. The gated-viewing (GV) technique using short-pulse lasers and fast-gated cameras in the nanosecond range enables utilizing the distance information in addition to the signal intensity of the acquired images. The InGaAs material system is very well suited for the fabrication of high-performance SWIR photodetectors providing a typical cutoff wavelength of 1.7 μm, which covers the emission lines of available laser sources at typical telecom wavelengths around 1.55 μm. However, the usually short integration times needed for GV leads to very small photosignals. We report on the development of SWIR avalanche photodetector (APD) arrays with 640 × 512 pixels and 15 μm pixel pitch based on the InGaAs material system. The InGaAs-APD focal plane arrays have been successfully integrated into SWIR cameras which yield gain values of M ≈ 10 on camera level at a reverse bias voltage around 21 V and are the first InGaAs-based SWIR cameras worldwide providing a 640 × 512 image format and utilizing avalanche gain for signal amplification. The camera performance is demonstrated by SWIR laser GV sample images.

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“…The format of the GV-ROIC is 640 × 512 pixels with 15 µm pixel pitch. The charge handling capacity (CHC) is about 120.000 e-and the readout noise with no correlated double sampling (CDS) is about 80 e-( [16]).…”

Section: Swir Gv Camera Based On Mct Apd Array Gv Focal-plane-array (...mentioning

confidence: 99%

Gated viewing at 2.09 µm laser wavelength: experimental system assessment and comparison to 1.57 µm

Göhler,

Lutzmann,

Walter

et al. 2023

Electro-Optical and Infrared Systems: Technology and Applications XX

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We have set up a Gated Viewing (GV) system operating at a laser wavelength of 2.09 μm in the short-wave infrared (SWIR) spectral range to experimentally assess the potential of such a system for security and military applications like long-range target identification and intelligence, surveillance and reconnaissance (ISR) in low visibility conditions. In particular, we compare this system with GV systems operating at the widely used SWIR wavelength of 1.57 μm. Our focus is on examining physical effects such as laser reflection and speckles at the target surface as well as atmospheric impacts like transmission and turbulence. Finally, estimates of system ranges are made. The gated viewing camera is based on an array of 640 × 512 mercury cadmium telluride (MCT) avalanche photodiodes (APD) with a pitch of 15 μm. The cut-on and cut-off wavelengths are 0.9 μm and 2.55 μm, respectively, providing sensitivity in the extended SWIR (eSWIR) spectral range. This allows to capture both laser wavelengths 1.57 μm and 2.09 μm with the same GV camera. The camera is equipped with an aspherical F/3 lens with a focal length of 600 mm, resulting in a field-of-view (FOV) of 0.92° × 0.73°. The 1.57 μm laser is based on a commercial flashlamp-pumped Nd:YAG laser combined with an optical parametric oscillator (OPO) with a maximal pulse energy of 65 mJ at 20 Hz pulse repetition frequency (PRF) and a pulse width of τ = 11 ns. The 2.09 μm laser is an in-house developed solution with approximately 20 mJ at 20 Hz PRF and τ = 12 ns.

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Short-Wave Infrared HgCdTe Electron Avalanche Photodiodes for Gated Viewing

Cited by 9 publications

References 15 publications

Developments and characterization of HgCdTe e-APDs at SITP

Developments and characterization of HgCdTe e-APDs at SITP

InGaAs APD matrix sensors for SWIR gated viewing

Gated viewing at 2.09 µm laser wavelength: experimental system assessment and comparison to 1.57 µm

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