Short wavelength infrared pBn GaSb/AlAsSb/InPSb photodetector

Cohen-Elias, D.; Uliel, Y.; Cohen, Noam A.; Shafir, I.; Westreich, Ohad; Katz, M.

doi:10.1016/j.infrared.2017.05.021

Cited by 12 publications

(6 citation statements)

References 17 publications

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“…Antimony (Sb)-based high-electron, high-hole mobility III-V binary (InSb, GaSb, AlSb), ternary (InAlSb, InGaSb, GaAlSb), and quaternary (InGaAlSb, InGaPSb, InAlPSb, GaAlPSb, InGaPSb) alloys and heterostructures (quantum wells (QWs) including superlattices (SLs)) have attracted a great deal of attention due to their promises for developing next-generation high-speed infrared opto-electronic and thermo-electric devices [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Among others, the indium-based pnictides (InX; X = P, As, and Sb) have recently gained considerable importance.…”

Section: Introductionmentioning

confidence: 99%

“…Although the lowest bandgap E g (≡0.18 eV) of InSb material is critical for midinfrared optoelectronics, ultrathin films, QWs, and SLs involving InP (E g ≡ 1.35 eV) and InAs (E g ≡ 0.35 eV) are being used to design metal oxide-semiconductor field-effect transistors (MOSFETs), bipolar junction transistors (BJTs), multi-junction solar cells, light-emitting/ receiving devices, infrared detectors (IDs), Shockley diodes (SDs), long-wavelength laser diodes (LDs), photodetectors (PDs), thermoelectric generators (TEGs), etc. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. According to Talazac et al [17], several Schottky devices have been integrated recently into different ecosystems for detecting radiation, harmful gases, and pollutants (e.g., ozone O 3 , nitrogen oxide NO 3 , etc.)…”

Section: Introductionmentioning

confidence: 99%

“…There are still a few intrinsic issues that inhibit the design of several important device structures. However, solutions to these problems can be achieved by exploiting appropriate experimental [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] and/or theoretical techniques [18].…”

Section: Introductionmentioning

confidence: 99%

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Systematic Assessment of Phonon and Optical Characteristics for Gas-Source Molecular Beam Epitaxy-Grown InP1−xSbx/n-InAs Epifilms

Talwar,

Lin

2023

Crystals

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Experimental and theoretical assessments of phonon and optical characteristics are methodically accomplished for comprehending the vibrational, structural, and electronic behavior of InP1−xSbx/n-InAs samples grown by Gas-Source Molecular Beam Epitaxy. While the polarization-dependent Raman scattering measurements revealed InP-like doublet covering optical modes (ωLOInP~350 cm−1, ωTOInP~304 cm−1) and phonons activated by disorders and impurities, a single unresolved InSb-like broadband is detected near ~195 cm−1. In InP1−xSbx, although no local vibrational (InSb:P; x → 1) and gap modes (InP:Sb; x → 0) are observed, the Raman line shapes exhibited large separation between the optical phonons of its binary counterparts, showing features similar to the phonon density of states, confirming “two-mode-behavior”. Despite the earlier suggestions of large miscibility gaps in InP1−xSbx epilayers for x between 0.02 and 0.97, our photoluminescence (PL) results of energy gaps insinuated achieving high-quality single-phase epilayers with x ~ 0.3 in the miscibility gap. Complete sets of model dielectric functions (MDFs) are obtained for simulating the optical constants of binary InP, InSb, and ternary InP1−xSbx alloys in the photon energy (0 ≤ E ≤ 6 eV) region. Detailed MDF analyses of refractive indices, extinction coefficients, absorption and reflectance spectra have exhibited results in good agreement with the spectroscopic ellipsometry data. For InP0.67Sb0.33 alloy, our calculated lowest energy bandgap E0 ~ 0.46 eV has validated the existing first-principles calculation and PL data. We feel that our results on Raman scattering, PL measurements, and simulations of optical constants provide valuable information for the vibrational and optical traits of InP1−xSbx/n-InAs epilayers and can be extended to many other technologically important materials.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Systematic Assessment of Phonon and Optical Characteristics for Gas-Source Molecular Beam Epitaxy-Grown InP1−xSbx/n-InAs Epifilms

Talwar,

Lin

2023

Crystals

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“…InP 1−x Sb x alloy with x=0.31 can be lattice matched to InAs and the predicted band gap is 638 meV (1.94 μm) at 77 K [19]. Historically, this material has been investigated as a cladding layer for mid-infrared lasers [20][21][22], a barrier layer for mid-wavelength infrared (MWIR) photodetectors [23,24], and an absorber layer for SWIR photodetectors [11,25].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, because their valence band difference is close to zero, InPSb, InAs and InPSb/InAs SLs can form electron barriers to each other, which can be exploited in bandgap engineering to reduce the dark current [1]. Finally, InPSb/InAs SLs can be grown by metalorganic chemical vapor deposition (MOCVD) due to less antimony incorporation and easier handling of phosphorus, whereas most Sb-based SL materials and devices have been exclusively grown by molecular beam epitaxy (MBE) [11,15,17,18,25].…”

Section: Introductionmentioning

confidence: 99%

Short wavelength infrared InPSb/InAs superlattice photodiode grown by metalorganic chemical vapor deposition

Zhu¹,

Zhu²,

Liu³

et al. 2022

Phys. Scr.

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We report the growth and characterization of InPSb/InAs superlattice (SL) materials and devices in the short-infrared wavelength range by metalorganic chemical vapor deposition (MOCVD). Good structural quality was achieved with a lattice mismatch of less than 0.09% and smooth surfaces with a roughness of only 0.304 nm. A pin homojunction photodetector with 10 monolayer (ML) InPSb/2 monolayer (ML) InAs SLs on InAs substrate was grown and fabricated. At 77K, the device demonstrated a 100% cut-off wavelength of ~2.6 µm, a dark current density of 8.7 × 10−10 A/cm2 at −0.1 V bias voltage, and a specific detectivity of 1.3× 1013 cm·Hz1/2/W at 2.0 μm.

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Structural and optical properties of InP1-xSbx/n-InAs epilayers grown by gas source molecular beam epitaxy

Talwar

Lin

2023

Applied Surface Science

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Short wavelength infrared pBn GaSb/AlAsSb/InPSb photodetector

Cited by 12 publications

References 17 publications

Systematic Assessment of Phonon and Optical Characteristics for Gas-Source Molecular Beam Epitaxy-Grown InP1−xSbx/n-InAs Epifilms

Systematic Assessment of Phonon and Optical Characteristics for Gas-Source Molecular Beam Epitaxy-Grown InP1−xSbx/n-InAs Epifilms

Short wavelength infrared InPSb/InAs superlattice photodiode grown by metalorganic chemical vapor deposition

Structural and optical properties of InP1-xSbx/n-InAs epilayers grown by gas source molecular beam epitaxy

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