Short-wavelength (λ&amp;lt;2 μm) intersubband absorption dynamics in ZnSe/BeTe quantum wells

Akimoto, R.; Akita, K.; Sasaki, Fumio; Kobayashi, S.

doi:10.1063/1.1468261

Cited by 16 publications

(2 citation statements)

References 12 publications

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“…This heterostructure has a large conduction-band offset (CBO) of 2.3 eV for electrons in ZnSe layers, by which we actually demonstrated the ISB absorption as short as 1.6 µm covering the 1.55 µm wavelength within its spectral half width [3]. In addition, we have also developed CdS/BeTe hetero-structures [4], which have a huge CBO of 3.1 eV to avoid a slow carrier relaxation process of Γ(ZnSe)-X(BeTe) transfer observed in ZnSe/BeTe [5]. For device applications, the confinement of the infrared light into active layers using waveguide structure is an important point for reducing an optical gate switching power for all-optical switching device.…”

Section: Introductionmentioning

confidence: 92%

Ultrafast intersubband optical switching in II–VI‐based quantum well for optical fiber communications

Akimoto

Akita

et al. 2006

Physica Status Solidi (b)

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PACS 42.65. Pc, 78.67.De Ultrafast all-optical switching at optical communication wavelength has been investigated by utilizing an intersubband transition (ISBT) of II -VI-based multiple quantum wells (MQWs) fabricated in high-mesa waveguide devices. At first, we have achieved λ ~ 1.55 µm ISBT absorption in (CdS/ZnSe)/BeTe QWs. The QWs consists of Cl-doped CdS/ZnSe well and BeTe barrier. The ISBT optical nonlinearity in the wafer sample exhibits sub-ps relaxation time and sub-pJ/µm 2 saturation energy, indicating a promising characteristic for high-speed switching. The waveguide device fabricated consists of a CdS/ZnSe/BeTe MQWs core layer and two top and bottom ZnMgBeSe quaternary cladding layers. Ultrafast gate switching within a time window of 0.56 ps was demonstrated with pump pulse at λ = 1.57 µm and probe pulse at λ = 1.63 µm in this waveguide device.

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Section: Introductionmentioning

confidence: 92%

Ultrafast intersubband optical switching in II–VI‐based quantum well for optical fiber communications

Akimoto

Akita

et al. 2006

Physica Status Solidi (b)

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“…As a result of these studies, various material parameters of ISBT in GaN/AlN have been clarified. In particular, the ultrafast ISBT relaxation time, which is the fastest one among reported for various materials [6][7][8], promises to increase the possibility of realizing ultrafast optical switches.…”

Section: Introductionmentioning

confidence: 98%

Ultrafast intersubband relaxation dynamics and coherent nonlinearity in GaN/AlN multiple quantum wells

et al. 2006

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We have investigated the ultrafast coherent dynamics of the intersubband transition in GaN/AlN multiple quantum wells, using a spectral resolved two-color pump-probe technique. We have found a significant spectrum change as a function of the delaytime τ. For negative delaytimes corresponding to τ < 0, coherent spectrum oscillations have been observed. At τ ~ 0, asymmetric dispersion has been observed. For positive delaytimes, τ > 0, no measurable spectrum change has been observed. From the analysis of these results, we have estimated that intersubband transitions dephasing time is more than 100 fs measured at room temperature.

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Shorter wavelength intersubband absorption down to λ = 1.55 µm in (CdS/ZnSe)/BeTe type‐II superlattices

Akimoto

Akita

et al. 2006

Phys. Status Solidi (c)

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We first present the dependence of intersubband transition (ISB-T) on the electronic doping density in (CdS/ZnSe)/BeTe superlattices (SLs). The in situ RHEED and X-ray diffraction measurements reveal these SLs with perfect structure. An ISB-T energy as high as 0.787 eV is observed in this structure. The intensity of ISB absorption increases with increasing ZnCl 2 flux until reaches a maximum and then decreases with further more ZnCl 2 flux supplying. The ISB-T energy slightly red shifts from 0.787 to 0.775 eV with ZnCl 2 flux increasing and then blue shifts to 0.785 eV when the intensity of ISB decreases with more chlorine doping. Finially, The anneal effects on the properties in (CdS/ZnSe)/BeTe as well as CdS/ZnSe structures are studied. The explanations to result in the change in (CdS/ZnSe)/BeTe and CdS/ZnSe structures are given.

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Short-wavelength (λ<2 μm) intersubband absorption dynamics in ZnSe/BeTe quantum wells

Cited by 16 publications

References 12 publications

Ultrafast intersubband optical switching in II–VI‐based quantum well for optical fiber communications

Ultrafast intersubband optical switching in II–VI‐based quantum well for optical fiber communications

Ultrafast intersubband relaxation dynamics and coherent nonlinearity in GaN/AlN multiple quantum wells

Shorter wavelength intersubband absorption down to λ = 1.55 µm in (CdS/ZnSe)/BeTe type‐II superlattices

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