Shot noise suppression in p-n junctions due to carrier recombination

Maione, I. A.; Fiori, Gianluca; Pellegrini, Bruno; Macucci, Massimo; Basso, Giovanni

doi:10.1063/1.3140435

Cited by 3 publications

(2 citation statements)

References 6 publications

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“…This implies a low generation current at reverse bias, which further suggests the low density of trap states within the space charge region. 35,36 As discussed later, the free-of-trap states are closely related to the highly crystalline Si substrate since the space charge region at the NiO/Si interface is mainly located at the Si side. In addition, the rectification ratio, which is defined as the ratio of the current at the reversed bias to the current at the forward one, is calculated as low as 3.8 × 10 −2 at the bias voltage of 0.25 V (Figure 3a inset).…”

Section: ■ Results and Discussionmentioning

confidence: 94%

Solution-Processed NiO/Si Heterojunctions for Efficient Self-Powered UV–Vis-NIR Broadband Photodetection

Jiang,

Wang,

Zhang

et al. 2024

ACS Appl. Electron. Mater.

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In the current work, efficient self-powered UV−vis-near-infrared (NIR) broadband NiO/Si heterojunction photodetectors have been fabricated by room-temperature spin-coating synthesis of a wide bandgap NiO nanocrystal thin film on an n-type Si substrate. Structural properties and atomic binding energy studies suggested that Ni vacancy defects were formed in the NiO nanocrystal thin films, verifying their p-type conductivity, which facilitated the formation of a p−n junction at the NiO/Si interface. Further studies showed that the energy band structure of NiO matched well with that of Si with a small valence band offset (0.04 eV) at the NiO/Si interface, facilitating the efficient transport of photoexcited carriers therein. As a result, responsivity and detectivity as high as 2.0 A/W and 8.5 × 10 13 Jones, respectively, have been obtained at zero bias, both of which are higher than most reported state-of-the-art devices. Furthermore, the NiO/Si heterojunction photodetectors showed good stability and uniformity. Because of the simple process of spin-coating synthesis of NiO nanocrystal thin films, the fabrication of efficient and broadband NiO/Si heterojunction photodetectors is scalable, reproducible, and low cost, which will find applications in modern industrial and scientific applications.

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Section: ■ Results and Discussionmentioning

confidence: 94%

Solution-Processed NiO/Si Heterojunctions for Efficient Self-Powered UV–Vis-NIR Broadband Photodetection

Jiang,

Wang,

Zhang

et al. 2024

ACS Appl. Electron. Mater.

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“…We have applied the techniques discussed in this paper to measurements in harsh conditions, achieving interesting results. For example, we have performed the noise characterization of p-n junctions at current levels down to 10 pA [9], and the measurement of shot noise in double barrier resonant tunnel devices operating at current levels below 1 pA [10].…”

Section: Discussionmentioning

confidence: 99%

Performance analysis of correlation techniques for noise measurements

Macucci

Basso

Fiori

et al. 2015

2015 International Conference on Noise and Fluctuations (ICNF)

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The cross-correlation technique makes it possible to perform noise measurements with a sensitivity that would otherwise be unreachable, well below the noise floor of the amplifiers. Not all noise contributions from the amplifiers can however be eliminated or even just attenuated by cross-correlation: therefore it is important to take into consideration the detailed characteristics of the DUT (Device Under Test) and of the amplifiers when setting up the measurement system. Here we discuss the relative advantages of the different (“series” and “parallel”) configurations coupled with our technique for the accurate evaluation of the transimpedance between the noise source to be measured and the amplifier output. In particular, we show (i) the importance of the comparison between the real and the imaginary part of the cross-spectrum due to the asymmetry of the correlation amplifiers and (ii) how to estimate the maximum number of averages in the cross-spectrum evaluation that leads to an actual advantage from the point of view of the measurement accuracy. Finally we discuss the issue of shielding from external spurious signals, whose relevance is often underestimated

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Integrated balanced homodyne photonic–electronic detector for beyond 20 GHz shot-noise-limited measurements

Bruynsteen

Vanhoecke

Bauwelinck

et al. 2021

Optica

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Optical homodyne detection is used in numerous quantum and classical applications that demand high levels of sensitivity. However, performance is typically limited due to the use of bulk optics and discrete receiver electronics. To address these performance issues, in this work we present a co-integrated balanced homodyne detector consisting of a silicon photonics optical front end and a custom integrated transimpedance amplifier designed in a 100 nm GaAs pHEMT technology. The high level of co-design and integration provides enhanced levels of stability, bandwidth, and noise performance. The presented detector shows a linear operation up to 28 dB quantum shot noise clearance and a high degree of common-mode rejection, at the same time achieving a shot-noise-limited bandwidth of more than 20 GHz. The high performance of the developed devices provide enhanced operation to many sensitive quantum applications such as continuous variable quantum key distribution, quantum random number generation, or high-speed quantum tomography.

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Shot noise suppression in p-n junctions due to carrier recombination

Cited by 3 publications

References 6 publications

Solution-Processed NiO/Si Heterojunctions for Efficient Self-Powered UV–Vis-NIR Broadband Photodetection

Solution-Processed NiO/Si Heterojunctions for Efficient Self-Powered UV–Vis-NIR Broadband Photodetection

Performance analysis of correlation techniques for noise measurements

Integrated balanced homodyne photonic–electronic detector for beyond 20 GHz shot-noise-limited measurements

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