Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate

Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells

“…In particular, in the diffused emitter approach, this process consists of three steps: 1) In the initial stage of the MOVPE process, wafers are typically subjected to a high-temperature annealing under hydrogen (H 2 ) atmosphere to prepare the surface for a high-quality III-V semiconductor epitaxy (oxide pyrolysis, double-step formation, …) [16,17]; 2) in order to form the emitter, wafers are exposed to high-temperature bakes under phosphine (PH 3 ) to enable the diffusion of phosphorus (P) into the silicon substrate [18]; and 3) finally, as a result of the surface degradation caused by the PH 3 exposure during the formation of the emitter, substrates need to be submitted to an additional treatment, aimed to recover the surface morphology for subsequent epitaxial growth [19]. In this sense, the formation of the emitter by exposing wafers to a high PH 3 concentration is followed by a H 2 annealing intended to recover the damaged surface morphology.…”

Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth

“…This distance can be derived by considering a right-angled triangle between the [110] direction, the [1][2][3][4][5][6][7][8][9][10] direction and the opening. With the distance 400 nm constituting the base of the triangle and the angle between the [110] direction and the opening being 30°, the height of the triangle corresponding to the distance in the [110] direction becomes 400/tan(30°) = 692.8… ~700 nm.…”

“…The angle α is given by the angle between the opening direction and the [110] crystallographic direction, θ is the angle which the stacking fault makes with the (001) plane and φ is the angle with which the bounding partials diverge from [1][2][3][4][5][6][7][8][9][10][11][12], the direction in which the stacking fault propagates. The angle α is determined simply by observing the intersection lines of stacking faults with the ELOG surface (which can be either [110] or [1][2][3][4][5][6][7][8][9][10]) and the angle they make with the opening direction, which in this case becomes 30° since the faults' intersection lines with the ELOG layer surfaces lie exclusively along [110] and the opening angle with respect to [110] is an experimental parameter set to be 30° since this angle is beneficial to the lateral growth rate.…”

“…The angle α is determined simply by observing the intersection lines of stacking faults with the ELOG surface (which can be either [110] or [1][2][3][4][5][6][7][8][9][10]) and the angle they make with the opening direction, which in this case becomes 30° since the faults' intersection lines with the ELOG layer surfaces lie exclusively along [110] and the opening angle with respect to [110] is an experimental parameter set to be 30° since this angle is beneficial to the lateral growth rate. Thus, even though a smaller angle α would lead to a lower mask thickness necessary to achieve filtering, it would also lead to a smaller lateral growth rate which is of greater concern than the mask thickness.…”

“…Heteroepitaxy of lll-Vs such as GaAs and InP on Si has recently received renewed interest, not least in the quest for light sources integrated with Si [1][2][3][4]. Although some approaches, e.g.…”