Monolithic III/V integration on (001) Si substrate

Kunert, Bernardette; Volz, Kerstin

doi:10.1002/9781119313021.ch8

Cited by 4 publications

(3 citation statements)

References 235 publications

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“…Third, the carrier gas composition could be modified, for example, by adding hydrogen, which can help to suppress the substrate oxidation. Finally, a surface treatment has to be used to create a suitable Si termination, such as hydrogen-terminated Si or (NH 4 ) 2 S x . , However, the long-term stability of common surface terminations is not high …”

Section: Resultsmentioning

confidence: 99%

Chemical Vapor Deposition of MoS₂ for Energy Harvesting: Evolution of the Interfacial Oxide Layer

Verhagen

Rodríguez

Vondráček

et al. 2020

ACS Appl. Nano Mater.

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The growth of two-dimensional (2D) materials directly on the substrates that are relevant to device fabrication is crucial for their large-area production and application. This is because their production via transfer processes not only increases the costs but, more importantly, induces contamination and mechanical defects in the transferred material. The presence of a dielectric interface layer and the control of its thickness in transistors and p−n heterojunctions are essential aspects in the semiconductor industry. In the present work, MoS 2 flakes and films with thicknesses down to the monolayer limit were grown using chemical vapor deposition (CVD) on Si substrates covered with a native oxide layer. The high quality of the as-grown MoS 2 resting on a flat SiO 2 surface was documented by a combination of atomic force microscopy, optical spectroscopy, including tip-enhanced photoluminescence spectroscopy, and photoelectron microspectroscopy methods. The changes of the interfacial oxide were then interrogated using spectroscopic imaging ellipsometry and X-ray photoelectron spectroscopy, both with micrometer scale resolution, to show the increase of the oxide layer thickness by several nanometers during the heating and MoS 2 growth processes. Our results evidence the possibility of growing high-quality MoS 2 directly on thin dielectrics. However, at the same time, if this type of MoS 2 deposition is to be used for device fabrication, the simultaneous increase of the SiO 2 thickness makes it important to have proper knowledge and control of the growth process. For the applications in energy harvesting where only a thin (or none) insulating layer is required, alternative growth protocols, surface passivation, or a different dielectric material (e.g., Al 2 O 3 ) are suggested.

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Section: Resultsmentioning

confidence: 99%

Chemical Vapor Deposition of MoS₂ for Energy Harvesting: Evolution of the Interfacial Oxide Layer

Verhagen

Rodríguez

Vondráček

et al. 2020

ACS Appl. Nano Mater.

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“…Volz et al achieved APB-free GaP on Si (001) substrate with an offcut angle of $0.12°using metalorganic vapor phase epitaxy (MOVPE) [47][48][49]. A 500 nm Si buffer layer was first deposited, followed by postgrowth hydrogen annealing with the pressure of 950 mbar for 10 min at 975°C to obtain a D steps-dominated Si surface with an average terrace distance of $120 nm.…”

Section: Mocvd/movpe Grown Apb-free Gaas/si (001)mentioning

confidence: 99%

“…However, in Figure 10( are left near the edge of the D steps. During subsequent growth of GaP on these S triangle islands, the APBs that resemble the underlying Si steps can be found in two orthogonal directions, that is, [110] and [110] [48,49,66].…”

Section: Mbe Grown Apb-free Gaas/si (001)mentioning

confidence: 99%

From Challenges to Solutions, Heteroepitaxy of GaAs-Based Materials on Si for Si Photonics

Yang,

Deng,

Park

et al. 2024

Thin Films - Growth, Characterization and Electrochemical Applications

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Monolithic growth of III-V materials onto Si substrates is appealing for realizing practical on-chip light sources for Si-based photonic integrated circuits (PICs). Nevertheless, the material dissimilarities between III-V materials and Si substrates inevitably lead to the formation of crystalline defects, including antiphase domains (APBs), threading dislocations (TDs), and micro-cracks. These nontrivial defects lead to impaired device performance and must be suppressed to a sufficiently low value before propagating into the active region. In this chapter, we review current approaches to control the formation of defects and achieve high-quality GaAs monolithically grown on Si substrates. An APB-free GaAs on complementary-metal-oxide semiconductor (CMOS)-compatible Si (001) substrates grown by molecular beam epitaxy (MBE) only and a low TD density GaAs buffer layer with strained-layer superlattice (SLS) and asymmetric step-graded (ASG) InGaAs layers are demonstrated. Furthermore, recent advances in InAs/GaAs quantum dot (QD) lasers as efficient on-chip light sources grown on the patterned Si substrates for PICs are outlined.

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Photoresponsivity, Electrical and Dielectric Properties of GaAs/P-Si Heterojunction-Based Photodiode

Ashery

Gaballah

Elnasharty

2021

Silicon

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Monolithic III/V integration on (001) Si substrate

Cited by 4 publications

References 235 publications

Chemical Vapor Deposition of MoS₂ for Energy Harvesting: Evolution of the Interfacial Oxide Layer

Chemical Vapor Deposition of MoS₂ for Energy Harvesting: Evolution of the Interfacial Oxide Layer

From Challenges to Solutions, Heteroepitaxy of GaAs-Based Materials on Si for Si Photonics

Photoresponsivity, Electrical and Dielectric Properties of GaAs/P-Si Heterojunction-Based Photodiode

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Monolithic III/V integration on (001) Si substrate

Cited by 4 publications

References 235 publications

Chemical Vapor Deposition of MoS2 for Energy Harvesting: Evolution of the Interfacial Oxide Layer

Chemical Vapor Deposition of MoS2 for Energy Harvesting: Evolution of the Interfacial Oxide Layer

From Challenges to Solutions, Heteroepitaxy of GaAs-Based Materials on Si for Si Photonics

Photoresponsivity, Electrical and Dielectric Properties of GaAs/P-Si Heterojunction-Based Photodiode

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Chemical Vapor Deposition of MoS₂ for Energy Harvesting: Evolution of the Interfacial Oxide Layer

Chemical Vapor Deposition of MoS₂ for Energy Harvesting: Evolution of the Interfacial Oxide Layer