Si 2p XPS spectrum of the hydrogen‐terminated (100) surface of device‐quality silicon

Abstract

An experimental study of the Si 2p XPS spectrum at different take-off angles of atomically flat, hydrogenterminated 1 × 1 Si(100) is reported. The observed spectrum can be described accurately by considering three additional contributions to the spectrum of elemental silicon. Each contribution is attributed to a chemical state of silicon on the basis of its chemical shift with respect to elemental silicon and the depth of the region where it was originated.

Quantitative XPS analysis of hydrosilated 1-alkene and 1-alkyne at terraced, dihydrogen-terminated, 1 × 1 (100) silicon

“…32 Rather, the Si 2p signal contained features (referred to as Si ý or Si 2ý ) at a binding energy higher than that of elemental silicon Si 0 by 0.3 0.6 eV. 30 The amount of adventitious carbon, evaluated from the survey spectra (not shown), on the hypothesis that it is mainly formed by methylene units, was found to be 1.5 2.0 ð 10 14 CH 2 cm 2 (the protocol adopted to extract this amount from raw spectra will be discussed later).…”

An AFM, XPS and electrochemical study of molecular electroactive monolayers formed by wet chemistry functionalization of H-terminated Si(100) with vinylferrocene

“…2(a), where the SiO 2 component is clearly visible as a feature separated from the bulk by 3.5-4 eV, the shift depending on the oxide thickness [40]. As for the hydride terminations, the Si 2p chemical shifts with respect to the bulk component have been previously reported as 0.2-0.3 (Si monohydride termination) and $0.35-0.6 eV (dihydride analogous), the uncertainty being related mainly to the low intensity of the components [41][42][43]. The presence of chemically shifted Si 2p components, in addition to a variable amount of SiO 2 , can be unambiguously inferred from inspection of Fig.…”

“…The two latter values closely reproduce previous reports on H-Si. In the case of H-terminated Si(1 0 0), the presence of an additional component on the low-binding energy side has been reported in the literature at À0.25 to À0.3 eV, and related essentially to a surface correction to bulk silicon [43]. In a clean Si(1 0 0) reconstructed surface, the low BE region is dominated by the dimer-up subset of Si atoms, which has been located at $À0.5 eV from Si(0) [42].…”

“…Direct assessment of the presence of a Si-C bond as a separate component in the Si 2p peak is routinely obtained when the substrate is clean Si, while in hydrogenated Si, mono-and dihydride components fall in the same binding energy range [41][42][43]. From inspection of the Si 2p complex peak, reported in Fig.…”

Hydrosilation of 1-alkyne at nearly flat, terraced, homogeneously hydrogen-terminated silicon (100) surfaces

“…13,26 Figure 1 compares atomic force micrographs of Si(100) surfaces after etching an as-received slice in HF aq ˛ , after treating the HF aq -etched surface in H 2 at 850°C ˇ and after treating the HF aq -etched surface in H 2 at 1100°C (a). The root-mean-square roughness decreased progressively with the treatment temperature from 0.18 nm in ˛ through 0.10 nm in ˇ , to 0.05 nm in (a).…”